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Spectroscopy of Proton Implanted GaN

Published online by Cambridge University Press:  15 February 2011

M.G. Weinstein ,
M. Stavola ,
C.Y. Song ,
C. Bozdog ,
H. Przbylinska ,
G.D. Watkins ,
S.J. Pearton  and
R.G Wilson
M.G. Weinstein
Affiliation:
Dept. of Physics, Lehigh University, Bethlehem, Pennsylvania 18015
M. Stavola
Affiliation:
Dept. of Physics, Lehigh University, Bethlehem, Pennsylvania 18015
C.Y. Song
Affiliation:
Dept. of Physics, Lehigh University, Bethlehem, Pennsylvania 18015
C. Bozdog
Affiliation:
Dept. of Physics, Lehigh University, Bethlehem, Pennsylvania 18015
H. Przbylinska
Affiliation:
Dept. of Physics, Lehigh University, Bethlehem, Pennsylvania 18015
G.D. Watkins
Affiliation:
University of Florida, Dept. of Materials Science, Gainesville, Florida 32611
S.J. Pearton
Affiliation:
University of Florida, Dept. of Materials Science, Gainesville, Florida 32611
R.G Wilson
Affiliation:
Consultant, Stevenson Ranch, California 92065
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Abstract

Vibrational spectroscopy, photoluminescence, and optically detected electron paramagnetic resonance (ODEPR) have been used to characterize the defects produced in undoped and Si-doped GaN by the implantation of hydrogen. Several new vibrational bands were found near 3100 cm-1 in GaN that had been implanted with protons. These frequencies are close to those predicted for VGa-Hn complexes, leading to the tentative assignment of the new lines to VGa defects decorated with different numbers of H atoms. The proton implantation also produces an infrared PL band centered at 0.95 eV and the ODEPR spectrum labeled LEI, both of which were seen previously for electron-irradiated GaN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G5.9
Copyright
Copyright © Materials Research Society 1999

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References

1. Ponce, F.A. and Bour, D.P., Nature 386, 351 (1997).Google Scholar
2. GaN and Related Materials, edited by Pearton, S.J. (Gordon and Breach, Amsterdam, 1997).Google Scholar
3. Gallium Nitride (GaN), edited by Pankove, J. and Moustakas, T.D. (Academic, Boston, 1997).Google Scholar
4. Nakamura, S., Iwasa, N., Senoh, M., and Mukai, T., Jpn. J. Appl. Phys. 31, 1258 (1992).Google Scholar
5. Götz, W., Johnson, N.M., Bour, D.P., McCluskey, M.D., and Haller, E.E., Appl. Phys. Lett. 69, 3725 (1996).Google Scholar
6. Neugebauer, J. and Walle, C.G. Van de, Phys. Rev. Lett. 75, 4452 (1995).Google Scholar
7. Clerjaud, B., Côte, D., and Lebkiri, A., Proceedings 8th International Conference on Shallow-Level Centers in Semiconductors, Phys. Stat. Sol. (b) 210, (1998), to be published.Google Scholar
8. Walle, C.G. Van de, Phys. Rev. B 56, R10020 (1997).Google Scholar
9. Linde, M., Uftring, S.J., Watkins, G.D., Härle, V. and Scholz, F., Phys. Rev. B 55, 10177 (1997).Google Scholar
10. Watkins, G.D., Linde, M., Mason, P.W., Przybylinska, H., Bozdog, C., Uftring, S.J., Härle, V., Scholz, F., Choyke, W.J. and Slack, G.A., Defects in Semiconductors, ICDS-19, edited by Davies, G. and Nazaré, M.H. (Trans Tech, Switzerland, 1997), p. 1087.Google Scholar
11. Stavola, M., Identification of Defects in Semiconductors, edited by Stavola, M. (Academic, Boston, 1999), vol. 51B, p. 153.Google Scholar
12. Pajot, B., Chevallier, J., Chaumont, A., and Azoulay, R., Defects in Electronic Materials, edited by Stavola, M., Pearton, S.J., and Davies, G. (Mat. Res. Soc., Pittsburgh, 1988), p. 345.Google Scholar
13. Newman, R.C., Semicond. Sci. Technol. 5, 911 (1990).Google Scholar
14. Darwich, R., Pajot, B., Rose, B., Robein, D., Theys, B., Rahbi, R., Porte, C., and Gendron, F., Phys. Rev. B 48, 17776 (1993).Google Scholar
15. Zach, F.X., Haller, E.E., Gabbe, D., Iseler, G., Bryant, G.G., and Bliss, D.F., J. Electron. Mat. 25, 331 (1996).Google Scholar
16. Fischer, D.W., Manasreh, M.O., and Matous, G., J. Appl. Phys. 71, 4805 (1992).Google Scholar
17. Ewels, C.P., Oberg, S., Jones, R., Pajot, B., and Briddon, P.R., Semicond. Sci. Technol. 11, 502 (1996).Google Scholar
18. Clerjaud, B., Côte, D., and Naud, C., Phys. Rev. Lett. 58, 1755 (1987).Google Scholar
19. Glaser, E.R., Kennedy, T.A., Doverspike, K., Rowland, L.B., Gaskill, D.K., Freitas, J.A., AsaafKhan, M., Olson, D.T., Kuznia, J.N., Wickenden, W.K., Phys. Rev. B 51, 13326 (1995).Google Scholar
20. Buyanova, I.A., Wagner, Mt., Chen, W.M., Monemar, B., Lindström, J.L.., Amano, H., and Akasaki, I., Appl. Phys. Lett. 73, 2968 (1998).Google Scholar