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Spontaneous Lateral Modulations in InAlAs Buffer Layers Grown by MBE on InP Substrates

Published online by Cambridge University Press:  10 February 2011

F. Peiró ,
A. Cornet ,
J. C. Ferrer ,
J. R. Morante ,
G. Halkias  and
A. Georgakilas
F. Peiró
Affiliation:
EME, Enginyeria i Materials Electrònics. Dept. Física Aplicada i Electrònica, Universitat de Barcelona. Avda. Diagonal 645–647. 08028 Barcelona, Spain
A. Cornet
Affiliation:
EME, Enginyeria i Materials Electrònics. Dept. Física Aplicada i Electrònica, Universitat de Barcelona. Avda. Diagonal 645–647. 08028 Barcelona, Spain
J. C. Ferrer
Affiliation:
EME, Enginyeria i Materials Electrònics. Dept. Física Aplicada i Electrònica, Universitat de Barcelona. Avda. Diagonal 645–647. 08028 Barcelona, Spain
J. R. Morante
Affiliation:
EME, Enginyeria i Materials Electrònics. Dept. Física Aplicada i Electrònica, Universitat de Barcelona. Avda. Diagonal 645–647. 08028 Barcelona, Spain
G. Halkias
Affiliation:
Foundation for Research and Technology-Hellas (FORTH), IESL/MRG, P.O. Box 1527, Heraklion, Greece.
A. Georgakilas
Affiliation:
Foundation for Research and Technology-Hellas (FORTH), IESL/MRG, P.O. Box 1527, Heraklion, Greece.
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Abstract

Transmission Electron Microscopy (TEM) and X-ray Diffraction (XRD) have been used to analyze the spontaneous appearance of lateral composition modulations in InyAl1−yAs (yIn.≅ 50%) buffer layers of single quantum well structures grown by molecular beam epitaxy on exact and vicinal (100) InP substrates, at growth temperatures in the range of 530°C–580°C. The influence of the growth temperature, substrate misorientation and epilayer mismatch on the InAlAs lateral modulation is discussed. The development of a self-induced quantum-wire like morphology in the In0.53Ga0.47As single quantum wells grown over the modulated buffers is also commented on.

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