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Stability and Metastability in Semiconductor Strained-Layer Structures

Published online by Cambridge University Press:  25 February 2011

Brian W. Dodson ,
I. J. Fritz ,
S. Thomas Picraux  and
Jeffrey Y. Tsao
Brian W. Dodson
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185.
I. J. Fritz
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185.
S. Thomas Picraux
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185.
Jeffrey Y. Tsao
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185.
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Abstract

The physics governing stability properties and relaxation of mismatch strain in semiconductor strained-layer structures is reviewed. Experimental data on stability and rates of strain relaxation are examined. We conclude that essentially all observations on structural relaxation of semiconductor strained-layer structures can be explained by standard models of plastic deformation adapted to the special conditions controlling dislocation dynamics in these structures.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 103 , 1987 , 141
Copyright
Copyright © Materials Research Society 1988

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References

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