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Stability and Nanostrucure of Heterogeneous Amorphous Silicon Thin-Film Synthesized Under High Chamber Pressure (500 To 2200 Mtorr) Regime of Rf Pecvda

  • A. R. Middya (a1) (a2), S. Hamma (a1), S. Hazra (a2), S. Ray (a2) and C. Longeaud (a3)...
Abstract
ABSTRACT

We report on improvement in stability of a new type of amorphous silicon films, synthesized (growth rate > 0.1 nm/s) by driving the plasma condition close to the powder regime (or “γ-regime”) of rf PECVD. These films exhibit high mobility-lifetime products [(μτ)annld ∼ 10−4 cm2/V, σphd ∼ 5-10×105, Ea ≍ 0.7 - 0.9 eV ], compact network structure [CH ≍ 7 to 8 at%, nanovoid density < 0.01 %, ρ ≍ 2.23 ± 0.01 gm/cm3], new features of optical properties and density-of-state (DOS) above EF is significantly lower than that of state-of-the art films. The kinetics of light-induced (AM 1.5) degradation of μτ is very fast and saturated μτ ∼ 10−6cm2/V, a value similar to that of conventional a-Si:H films at annealed state. The improved stability of “new” a-Si films, henceforth it will be denoted as “quasi-amorphous silicon (qm-Si) thin- film”, will be correlated with its specific nanostructure.

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  • EISSN: 1946-4274
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