Skip to main content
×
×
Home

Stability of Sulfide Passivated Gallium Arsenide Surfaces

  • J. S. Solomon (a1), L. Petry (a1) and S. R. Smith (a1)
Abstract

The chemical state of (NH4)2S treated (100)GaAs surfaces exposed to ambient conditions for several days was correlated with barrier height measurements. Surface chemistry was characterized by Auger electron spectroscopy and barrier heights were calculated from C-V measurements obtained with a Hg probe. Results show that surfaces are chemically and electrically unstable for several hours following the sulfide treatment. The chemical and electrical states continually changed during ambient exposure up to 300 hours. Although strictly speaking, the surfaces were not passivated, the presence of sulfur did inhibit the formation of Ga and As oxides and the incorporation of carbon. In addition, stable, low barrier heights were observed after ambient exposure for several hours. Barrier heights from C-V measurements using deposited Au and Al contacts were compared to the barrier heights obtained with a Hg probe.

Copyright
References
Hide All
1 Yablonovitch, E., Candoff, C. J., Bhat, R., and Gmitter, T., Appl. Phys. Lett., 51, 439 (1987).
2 Jia-Fa, Fan, Yasuhi, Kurata, and Yasuo, Nanichi, Jap. J. Appl. Phys., 28, L22551 (1989).
3 Sandroff, C. J., Hegde, M. S., FarowL. A,. L. A,., Chang, C. C., and Harbison, J. P., Appl. Phys. Lett, 54., 362 (1989).
4 Haruhiro, Oigawa, Jia-Fa, Fan, Yasuo, Nannichi, Koji, Ando, Koichiro, Saiki, and Atsushi, Koma, Jap. J. Appl. Phys. 28, L340 (1989).
5 Hirohiko, Sugahara and Masaharu, Oshima, J. Appl. Phys., 69, 4349 (1991).
6 Lu, Z. H., Graham, M. J., Feng, X. H., and Yang, B. X., Appl. Phys. Lett., 62, 2932 (1993).
7 Hiroyama, , Yoshihige, Matsumoto, Haruhiro, Oigawa, and Yosuo, Nannichi, Appl., Phys, Lett., 54, 2565 (1989).
8 Yota, J. and Burrows, V. A., J. Vac. Sci. and Technol., A11, 1083 (1993).
9 Green, A. M. and Spicer, W. E., J. Vac. Sci. and Technol., A11, 1061 (1993).
10 Robinson, Gary Y., in Physics and Chemistry of III-V Compound Semiconductor Interfaces, edited by Wilmsen, C. W. (Plenum Press, New York, 1985)p 106.
11 Williams, R. H., Contemp. Phys., 23, 329 (1982).
Recommend this journal

Email your librarian or administrator to recommend adding this journal to your organisation's collection.

MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
Please enter your name
Please enter a valid email address
Who would you like to send this to? *
×

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 4 *
Loading metrics...

Abstract views

Total abstract views: 53 *
Loading metrics...

* Views captured on Cambridge Core between September 2016 - 23rd July 2018. This data will be updated every 24 hours.