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The Stability to Ageing of Pd/Zn and Pt-Based Ohmic Contacts to p-InGaAs/InP

Published online by Cambridge University Press:  10 February 2011

P. W. Leech ,
G. K. Reeves  and
P. Ressel
P. W. Leech
Affiliation:
CSIRO Div. Manufacturing Science and Technology, Victoria, Australia, leech@mst.csiro.au
G. K. Reeves
Affiliation:
Dept. of Communication and Electronic Engineering, R.M.I.T., Victoria, Australia
P. Ressel
Affiliation:
Ferdinand-Braun-Institut f¨i Höchstfrequenztechnik, D-12489 Berlin, Germany
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Abstract

Pd/Zn/Au contacts to p-In0.53Ga0.47As/InP with various barrier layers (Pd, Pt or LaB,) to the indiffusion of Au have been examined by Rutherford Backscattering Spectrometry (RBS). For the metallisations with a barrier layer of Pd, the ageing of the contacts at 400°C for 20 h produced a widespread indiffusion of Au. In comparison, the incorporation of a layer of Pt or amorphous LaB6 prevented an indiffusion of Au and significantly reduced any outdiffusion of the semiconductor elements. The presence of the barrier layer of Pt or LaB6 produced little or no detrimental increase in specific contact resistance, ρc, for this contact system. Values of ρc in the range 8–10 × 10−6 Ω cm2 were obtained for all of the contacts based on Pd/Zn/Au after annealing at 500°C. A comparison has been made with the characteristics of Pt/Ti/Pt/Au contacts to p-In0.53Ga0.47As/ InP which were shown as stable against the indiffusion of Au.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 514: Symposium I – Advanced Interconnects & Contact Materials & Processes for… , 1998 , 441
Copyright
Copyright © Materials Research Society 1998

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References

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