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Steplike Lineshape of Low Temperature Photoreflectance Spectra of InAlAs

Published online by Cambridge University Press:  15 February 2011

Y. Baltagi ,
E. Bearzi ,
C. Bru-Chevallier ,
T. Benyattou ,
G. Guillot  and
J. C. Harmand
Y. Baltagi
Affiliation:
Laboratoire de Physique de la Matière (URA CNRS 358) - INSA de Lyon - Bât 502 -69621 Villeurbanne Cedex, France., bru@insa.insa-lyon.fr
E. Bearzi
Affiliation:
Laboratoire de Physique de la Matière (URA CNRS 358) - INSA de Lyon - Bât 502 -69621 Villeurbanne Cedex, France., bru@insa.insa-lyon.fr
C. Bru-Chevallier
Affiliation:
Laboratoire de Physique de la Matière (URA CNRS 358) - INSA de Lyon - Bât 502 -69621 Villeurbanne Cedex, France., bru@insa.insa-lyon.fr
T. Benyattou
Affiliation:
Laboratoire de Physique de la Matière (URA CNRS 358) - INSA de Lyon - Bât 502 -69621 Villeurbanne Cedex, France., bru@insa.insa-lyon.fr
G. Guillot
Affiliation:
Laboratoire de Physique de la Matière (URA CNRS 358) - INSA de Lyon - Bât 502 -69621 Villeurbanne Cedex, France., bru@insa.insa-lyon.fr
J. C. Harmand
Affiliation:
CNET Bagneux (France Telecom), 96 av.Henri Ravera, 92220 Bagneux, France.
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Abstract

We have performed low temperature photoreflectance spectra on several MBE-InAlAs layers lattice matched to InP. Unusual lineshapes of PR spectra are observed at temperatures below 40K, characterized by a step at the InAlAs band gap energy. This step is shown to be related to a strong modification of the photo luminescence background of the photoreflectance spectra. This modification is attributed to an effect of carrier localization due to clustering effects in the InAlAs layers

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