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Strain Engineering and Luminescence in Si/SiGe Three Dimensional Nanostructures

Published online by Cambridge University Press:  25 May 2011

Nikhil Modi ,
Leonid Tsybeskov ,
David J. Lockwood ,
Xiao Z. Wu  and
Jean Marc Baribeau
Nikhil Modi
Affiliation:
Department of Electrical and Computer Engineering, New Jersey Institute of Technology, 106 Warren St, Newark, NJ 07102, U.S.A.
Leonid Tsybeskov
Affiliation:
Department of Electrical and Computer Engineering, New Jersey Institute of Technology, 106 Warren St, Newark, NJ 07102, U.S.A.
David J. Lockwood
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, ON, Canada
Xiao Z. Wu
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, ON, Canada
Jean Marc Baribeau
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, ON, Canada
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Abstract

Strain engineering in composition-controlled Si-Si/Ge nanocluster multilayers with high germanium content (~ 50%) is achieved by varying thicknesses of Si/SiGe layers and studied by low temperature photoluminescence (PL) measurements. The PL spectra show reduction in strained silicon energy bandgap and a splitting presumably associated with partial removal of heavy hole-light hole degeneracy in SiGe valence band. Time-resolved PL measurements performed under different excitation wavelengths show dramatically different PL lifetimes, ranging from ~ 2 μs to 10 ns and an unusually high PL quantum efficiency. The results are explained by using the Si/SiGe interface recombination model, which is supported by ultra-high resolution transmission and analytical electron microscopy measurements.

Keywords

luminescencenanostructureGe
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1305: Symposium AA – Group IV Semiconductor Nanostructures and Applications , 2011 , mrsf10-1305-aa17-56
Copyright
Copyright © Materials Research Society 2011

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References

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