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Strain Measurements and Laue Diffraction with Microbeams

Published online by Cambridge University Press:  15 February 2011

P.-C. Wang ,
G. S. Cargill III  and
I. C. Noyan
P.-C. Wang
Affiliation:
Department of Chemical Engineering, Materials Science, Mining Engineering, Columbia University, New York, NY 10027
G. S. Cargill III
Affiliation:
Department of Chemical Engineering, Materials Science, Mining Engineering, Columbia University, New York, NY 10027
I. C. Noyan
Affiliation:
IBM Research, Yorktown Heights, NY 10598
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Abstract

We describe a system being developed to use x-rays for spatially resolved measurements of strain, microstructure and composition in thin films. These capabilities are particularly important for improved understanding of electromigration, stress relaxation, and associated reliability issues in microelectronics. The system uses white radiation collimated and focused with a tapered glass capillary, an area CCD detector for measuring Laue patterns, and an energy sensitive Si detector for measuring lattice spacings. Examples are shown of strain measurements for a 4 μm thick Al film on a Si substrate with 300 μm and 30 μm x-ray beams; of Laue diffraction from a single grain for a 40 μm thick Al foil with a 0.3 μm x-ray beam; and of x-ray fluorescence mapping for a patterned Cu film with a 30 μm x-ray beam.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 375: Symposia AA – Applications of Synchrotron Radiation Techniques to Materials Science , 1994 , 247
Copyright
Copyright © Materials Research Society 1995

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References

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[9] These average “effective” lattice parameters a(sin2 ψ) depend on the measurement angle TP because the film is strained biaxially rather than hydrostatically. The error bars in Fig. 4 represent one standard deviation for the averaged values in each case and correspond to approximately ±0.1%. The energies for peaks in the diffraction patterns of Fig. 3 can be determined to better than 10% of their full-width-at-half-maximum values, giving δE/ E ≈ 0.1%.Google Scholar