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Strain Relief by Tilting of Epitaxial GaAs Films on Si

Published online by Cambridge University Press:  22 February 2011

L. J. Schowalter ,
E. L. Hall ,
N. Lewis  and
Shin Hashimoto
L. J. Schowalter
Affiliation:
Physics Dept. and Ctr. Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12181
E. L. Hall
Affiliation:
GE Research & Development Ctr., Schenectady, NY 12301
N. Lewis
Affiliation:
GE Research & Development Ctr., Schenectady, NY 12301
Shin Hashimoto
Affiliation:
Physics Dept., State University of New York at Albany, Albany, NY 12222
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Abstract

In this paper, a general formula is calculated relating the misalignment of a heteroepitaxial overlayer with respect to the substrate to the defects at the interface. High-resolution TEM studies are presented which show that the density of dislocations along the interface of GaAs grown on vicinal Si(100), with Burgers vector perpendicular to the interface, is consistent with the amount of tilt observed in ion-channeling studies. Arguments are also presented which demonstrate that the tilt observed is an effective form of strain relief but that this mechanism can only operate when the heteroepitaxial growth is nucleated by island growth. One significant conclusion is that the lower bound observed on the threading dislocation density in GaAs on Si is due to this mechanism of strain relief by tilting.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 130: Symposium C – Thin Films: Stresses and Mechanical Properties I , 1988 , 171
Copyright
Copyright © Materials Research Society 1989

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References

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