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Strained Field of Silver Overlayers Deposited on the Reconstructed Si(111) Surface

Published online by Cambridge University Press:  25 February 2011

L. J. Martinez-Miranda
Affiliation:
Department of Electrical Engineering, Laboratory for Research on the Structure of Matter, University of Pennsylvania, Philadelphia, PA 19104
J. J. Santiago-Aviles
Affiliation:
Department of Electrical Engineering, Laboratory for Research on the Structure of Matter, University of Pennsylvania, Philadelphia, PA 19104
Raul Perez-Sandoz
Affiliation:
Department of Physics, University of Puerto Rico, Cayey, Laboratory for Research on the Structure of Matter, University of Pennsylvania, Philadelphia, PA 19104
Randolph Carolissen
Affiliation:
Department of Materials Science and Engineering, Laboratory for Research on the Structure of Matter, University of Pennsylvania, Philadelphia, PA 19104
H. H. Weitering
Affiliation:
Department of Materials Science and Engineering, Laboratory for Research on the Structure of Matter, University of Pennsylvania, Philadelphia, PA 19104
W. R. Graham
Affiliation:
Department of Materials Science and Engineering, Laboratory for Research on the Structure of Matter, University of Pennsylvania, Philadelphia, PA 19104
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Abstract

We have performed high resolution x-ray diffraction measurements of the strain field in UHV deposited Ag(111) films on a 7×7 reconstructed Si(111) surfaces shows a faulted epitaxial layer with a 0.4% out-of-plane strain, and a -1% in-plane strain. The strain field anisotropy is similar to that observed on epitaxial YSi2-x on Si(111), and is an unexpected result for the present system, due to the lack of a lattice match between the silver and silicon unit cells. The out-of-plane diffraction peaks have an angular distribution of 1.23°, full width at half maximum (FWHM), as determined from rocking curve measurements.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

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