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Strained InGaAs/GaAs Multiple Quantum Wells Grown on Planar andPre-Patterned GaAs(100) Substrates VIA Molecular Beam Epitaxy: Applicationsto Light Modulators and Detectors

Published online by Cambridge University Press:  21 February 2011

Li Chen ,
Kezhong Hu ,
K. C. Rajkumar ,
S. Guhae ,
R. Kapre  and
A. Madhukar
Li Chen
Affiliation:
Photonic Materials and Devices Laboratoiy, University of Southern California, Los Angeles, CA 90089-0241
Kezhong Hu
Affiliation:
Photonic Materials and Devices Laboratoiy, University of Southern California, Los Angeles, CA 90089-0241
K. C. Rajkumar
Affiliation:
Photonic Materials and Devices Laboratoiy, University of Southern California, Los Angeles, CA 90089-0241
S. Guhae
Affiliation:
Photonic Materials and Devices Laboratoiy, University of Southern California, Los Angeles, CA 90089-0241
R. Kapre
Affiliation:
Photonic Materials and Devices Laboratoiy, University of Southern California, Los Angeles, CA 90089-0241
A. Madhukar
Affiliation:
Photonic Materials and Devices Laboratoiy, University of Southern California, Los Angeles, CA 90089-0241
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Abstract

We report the realization of high quality strained InGaAs/GaAs multiplequantum wells (MQW) grown on planar GaAs (100) substrates throughoptimization of molecular beam epitaxical (MBE) growth conditions andstructure. Such MQWs containing ∼ 11% In have lead to the realization of anasymmetric Fabry-Perot (ASFP) reflection modulator with a room temperaturecontrast ratio of 66:1 and an on-state reflectivity of 30%. For Incomposition ≥ 0.2, the improved optical quality for very thick (gt;2μm)InGaAs/GaAs MQWs grown on pre-patterned substrates is demonstrated viatransmission electron microscopy (TEM) and micro-absorptionmeasurements.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 228: Symposium N – Materials for Optical Information Processing , 1991 , 213
Copyright
Copyright © Materials Research Society 1992

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References

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