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Stress of Tio2 Thin Films Produced by Different Deposition Techniques

Published online by Cambridge University Press:  15 February 2011

C. Ottermann
Affiliation:
Schott Glaswerke, Research & Development, 6500 Mainz, Germany
J. Otto
Affiliation:
Schott Glaswerke, Research & Development, 6500 Mainz, Germany
U. Jeschkowski
Affiliation:
Schott Glaswerke, Research & Development, 6500 Mainz, Germany
O. Anderson
Affiliation:
Schott Glaswerke, Research & Development, 6500 Mainz, Germany
M. Heming
Affiliation:
Schott Glaswerke, Research & Development, 6500 Mainz, Germany
K. Bange
Affiliation:
Schott Glaswerke, Research & Development, 6500 Mainz, Germany
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Abstract

Stress in thin films has been measured very precisely (< 10 MPa) by analysing the curvature of quartz glass substrates before and after film deposition by means of a ZYGO Mark IV interferometer system. TiO2 films of approximately 100 nm thickness were prepared by reactive evaporation (RE), reactive ion plating (IP), plasma impulse chemical vapor deposition (PICVD) and spin coating (SC). Large variations in stress are found for different coating techniques and deposition conditions. This can be correlated to differences in optical properties, film density and crystalline structure. Relaxation effects and the influence of thermal treatment are also studied. The crystallization of amorphous TiO2 during heat treatment is accompanied by significant changes in film stress. The crystal size and morphology of TiO2 films after heat treatment strongly depend on the deposition technique and process conditions.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1 Bange, K. et al. , BMFT-Abschlußbericht, FKZ 13N5476/6 (1991)Google Scholar
2 Otto, J. et al. , Proc. SPIE 1323, 39 (1990)CrossRefGoogle Scholar
3 Schröder, H., Phys. Thin Films 5, 87 (1969)Google Scholar
4 Ottermann, C. et al. (in preparation)Google Scholar
5 Ottermann, C.R., Temmink, A. and Bange, K., Proc. SPIE 1272, 111 (1990)Google Scholar
6 Edlinger, J., PhD thesis, University of Innsbruck, Austria, 1990 Google Scholar
7 Windischmann, H., J. Vac. Sci. Techn. A9, 2431 (1991)Google Scholar
8 Stoney, G. C., Proc. Roy. Soc. London, A32 (1909) 172 Google Scholar