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Structural and Electrical Characterization of U Ltra-Thin SiO2 Grown on Hydrogen-Terminated Silicon Surfaces

Published online by Cambridge University Press:  21 February 2011

M. Hirose ,
T. Yasaka ,
M. Hiroshima ,
M. Takakura  and
S. Miyazaki
M. Hirose
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
T. Yasaka
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
M. Hiroshima
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
M. Takakura
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
S. Miyazaki
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
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Abstract

The surface microroughness of Si(100) wafers has been studied by FT-IR-ATR. The final wafer clean in an 0.1% HF + 1% H2O2 aqueous solution significantly improves the hydrogenterminated surface morphology as demonstrated by a sharp SiH2 stretching vibration peak accompanied with the weak SiH and SiH3 peaks. The ultra-thin gate oxide grown on such surface exhibits nearly ideal tunneling current transport. The cleaning in 4.5% HF reduces the SiH2 peak height and enhances SiH3, making the surface rough. Nevertheless, the tunneling characteristics are hardly influenced with such spectral change.

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References

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