Hostname: page-component-8448b6f56d-tj2md Total loading time: 0 Render date: 2024-04-18T04:49:13.251Z Has data issue: false hasContentIssue false
  • English
  • Français

Structural and Optical Properties of the Multilayer Structures Formed by Ge Sub-Critical Insertions in a Si Matrix

Published online by Cambridge University Press:  01 February 2011

George E. Cirlin ,
Nikolai D. Zakharov ,
Peter Werner ,
Alexander G. Makarov ,
Andrei F. Tsatsul'nikov ,
Victor M. Ustinov ,
Nikolai N. Ledentsov ,
Vyatcheslav A. Egorov  and
Ulrich Gösele
George E. Cirlin
Affiliation:
Max-Planck-Institute for Microstructure Physics, Halle D-06120, Germany Institute for Analytical Instrumentation RAS, 194021 St.Petersburg, Russia
Nikolai D. Zakharov
Affiliation:
Max-Planck-Institute for Microstructure Physics, Halle D-06120, Germany
Peter Werner
Affiliation:
Max-Planck-Institute for Microstructure Physics, Halle D-06120, Germany
Alexander G. Makarov
Affiliation:
A.F.Ioffe Phisico-Technical Institute RAS, 194021 St.Petersburg, Russia
Andrei F. Tsatsul'nikov
Affiliation:
A.F.Ioffe Phisico-Technical Institute RAS, 194021 St.Petersburg, Russia
Victor M. Ustinov
Affiliation:
A.F.Ioffe Phisico-Technical Institute RAS, 194021 St.Petersburg, Russia
Nikolai N. Ledentsov
Affiliation:
A.F.Ioffe Phisico-Technical Institute RAS, 194021 St.Petersburg, Russia
Vyatcheslav A. Egorov
Affiliation:
Institute for Analytical Instrumentation RAS, 194021 St.Petersburg, Russia
Ulrich Gösele
Affiliation:
Max-Planck-Institute for Microstructure Physics, Halle D-06120, Germany
Get access

Abstract

Si/Ge multilayer structures formed by the deposition of relatively small amounts of Ge layers (less then the critical thickness for 3D islands formation) are obtained by molecular beam epitaxy. Their structural and optical properties are investigated in detail. Appropriate growth parameter of the stacked island structures lead to significant increasing of the luminescence efficiency even at room temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 717: Symposium C – Si Front-End Junction Formation Technologies , 2002 , C4.4
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Teichert, Ch., Lagally, M.G., Peticolas, L.J., Bean, J.C., and Tersoff, J., Phys. Rev. B 53, 16334 (1996).Google Scholar
2. Eberl, K., Schmidt, O.G., Duschl, R., Kienzle, O., Ernst, E., Rau, Y., Thin Solid Films 369, 33 (2000)Google Scholar
3. Ledentsov, N. N., Böhrer, J., Beer, M., Heinricchsdorff, F., Grundmann, M., Bimberg, D., Ivanov, S. V., Ya. Meltser, B., Shaposhnikov, S. V., Yassievich, I. N., Faleev, N. N., Kop'ev, P. S. and Alferov, Zh. I. Phys. Rev. B 52 14058 (1995).Google Scholar
4. Ledentsov, N. N., Krestnikov, I. L., Maximov, M. V., Ivanov, S. V., Sorokin, S. L., Kop'ev, P. S., ZAlferov, h. I., Bimberg, D. and Sotomayor, C. M. Torres, Appl. Phys. Lett. 69, 1343 (1996).Google Scholar
5. Belousov, M. V., Ledentsov, N. N., Maximov, M. V., Wang, P. D., Yassievich, I. N., Faleev, N. N., Kozin, I. A., Ustinov, V. M., Kop'ev, P. S. and Alferov, Zh. I., Phys. Rev. B 51 14, 346 (1995).Google Scholar
6. Cirlin, G. E., Werner, P., Gösele, U., Volovik, B.V., Ustinov, V. M. and Ledentsov, N. N., Tech. Phys. Lett. 27, 14 (2001).Google Scholar
7. Wang, P. D., Ledentsov, N. N., Sotomayor Torres, C. M., Kop'ev, P. S. and Ustinov, V. M., Appl. Phys. Lett. 64, 1526 (1994).Google Scholar
8. Tsyrlin, G. E., Golubok, A. O., Tipissev, S. Ya. and Ledenstov, N. N., Semiconductors 29, 884 (1995).Google Scholar
9. Cirlin, G. E., Petrov, V. N., Golubok, A. O., Tipissev, S. Ya., Dubrovskii, V. G., Guryanov, G. M., Ledentsov, N. N. and Bimberg, D. Surf. Sci. 377-379, 895 (1997).Google Scholar
10. Zakharov, N. D., Werner, P. Gösele, U., Gerth, G. Cirlin, G. Egorov, V. A. and Volovik, B. V., Mat.Sci.Engeneering B 87, 92 (2001).Google Scholar
11. Heitz, R. Ledentsov, N.N., Bimberg, D. Egorov, A. Yu., Maximov, M. V., Ustinov, V. M., Zhukov, A. E., Alferov, Zh. I., Cirlin, G. E., Soshnikov, I. P., Zakharov, N. D., Werner, P. and Gösele, U., Appl.Phys.Lett. 74, 1701 (1999).Google Scholar
12. Volovik, B. V., Sizov, D. S., Tsatsul'nikov, A. F., Musikhin, Yu. G., Ledentsov, N. N., Ustinov, V. M., Egorov, V. A., Petrov, V. N., Polyakov, N. K. and Tsyrlin, G. E., Semiconductors 34, 1316(2000).Google Scholar
13. Mikhrin, S. S., Zhukov, A. E., Kovsh, A. R., Maleev, N. A., Ustinov, V. M., YShernyakov, u. M., Kayander, I. N., Kondrat'eva, E. Yu., Livshits, D. A., Tarasov, I. S., Maksimov, M. V., Tsatsul'nikov, A. F., Ledentsov, N. N., Kop'ev, P. S., Bimberg, D., Semiconductors 34, 119 (2000).Google Scholar