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Structural Characterization of Reactive Ion Etched Semiconductor Nanostructures Using X-Ray Reciprocal Space Mapping

Published online by Cambridge University Press:  15 February 2011

G. Bauer ,
A. A. Darhuber  and
V. Holy
G. Bauer
Affiliation:
Institut für Halbleiterphysik, Johannes Kepler Universität, A-4040 Linz, Austria
A. A. Darhuber
Affiliation:
Institut für Halbleiterphysik, Johannes Kepler Universität, A-4040 Linz, Austria
V. Holy
Affiliation:
Institut für Halbleiterphysik, Johannes Kepler Universität, A-4040 Linz, Austria
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Abstract

We have studied GaAs/AlAs periodic quantum dot arrays using high resolution x-ray diffraction (reciprocal space mapping) around the (004) and (113) reciprocal lattice points. From the distribution of the diffracted intensities we deduced the average strain status of the dots. From the numerical simulations it is evident that random elastic strain fields are present, which extend through almost the entire volume of the quantum dot. The simulations of the x-ray measurements revealed that the crystalline part of the dots is considerably smaller as scanning electron micrographs would indicate.

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