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Structural Study of GaN(As,P) Layers Grown on (0001) GaN by Gas Source Molecular Beam Epitaxy

Published online by Cambridge University Press:  10 February 2011

Tae-Yeon Seong ,
In-Tae Bae ,
Y. Zhao  and
C.W. Tub
Tae-Yeon Seong
Affiliation:
Dept. of Materials Science and Engineering, Kwangju Institute of Science and Technology (KJIST), Kwangju 500-712, Korea Electronic mail:, tyseong@kjist.ac.kr
In-Tae Bae
Affiliation:
Dept. of Materials Science and Engineering, Kwangju Institute of Science and Technology (KJIST), Kwangju 500-712, Korea
Y. Zhao
Affiliation:
Dept. of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA 92093-0407
C.W. Tub
Affiliation:
Dept. of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA 92093-0407
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Abstract

Transmission electron microscope (TEM) and transmission electron diffraction (TED) examination has been performed to investigate microstructural properties of gas source molecular beam epitaxial GaN(As,P) layers grown on (0001) GaN/sapphire at temperatures in the range 500–760 °C. As for the GaNAs, we report the observation of ordering with a space group P3ml in the layer grown at 730 °C. The layers grown at temperatures below 600 °C are polycrystalline, whist the 730°C GaNAs layer has epitaxial relation to the GaN substrate. It is also shown that the GaNAs layers experience a structural change from a zinc-blende phase to a wurtzite phase, as the growth temperature increases. As for the GaNP, it is shown that the layers grown at temperatures ≤ 600 °C experience phase separation resulting in a mixture of GaN-rich and GaP-rich GaNP with zinc-blende structure. However, the layers grown at temperatures ≥ 730 °C are found to be binary zinc-blende GaN(P) single crystalline materials. The layers grown at temperatures ≥ 730 °C consist of two types of micro-domains, i.e., GaN(P)1 and GaN(P)11; the former having twin relation to the latter.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G3.11
Copyright
Copyright © Materials Research Society 1999

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References

1. Stringfellow, G. B., J. Cryst. Growth 27, 21 (1974).Google Scholar
2. Iwata, K., Asahi, H., Asami, K. and Gonda, S., J. Cryst. Growth 175/176, 150 (1997).Google Scholar
3. Bi, W.G. and Tu, C.W., Appl. Phys. Lett. 63, 3506 (1993).Google Scholar
4. Sze, S.M., Physics of Semiconductor Devices, 2nd ed. (John-Wiley & Sons, New York, 1981).Google Scholar
5. Chandrasekhar, D., Smith, D.J., Strite, S., Lin, M.E., and Morkoq, H., J. Cryst. Growth 152, 135 (1995).Google Scholar
6. Trampent, A., Brandt, O., Yang, H., and Ploog, K.H., Appl. Phys. Lett. 70, 583 (1997).Google Scholar
7. Bae, I.-T., Seong, T.-Y., Park, Y.J., and Kim, E-K, (unpublished).Google Scholar
8. Korakis, D., Ludwig, K.F., and Mustakas, T.D., Appl. Phys. Lett. 71, 72 (1997).Google Scholar
9. Ruterana, P., Nouet, G., Stricht, W. Van der, Moerman, I., and Considine, L., Appl. Phys. Lett. 72, 1742 (1998).Google Scholar
10. Seong, T.-Y., Bae, I.-T., Choi, C.-J., Zhao, Y. and Tu, C. W., Electrochem. & Solid-State Lett., 2 94 (1999).Google Scholar
11. Yeh, C-Y., Lu, Z.W., Froyen, S. and Zunger, A., Phys. Rev. B 46, 10086 (1992).Google Scholar
12. Strite, S. and Morkoc, H., J. Vac. Sci. Technol. B 10, 1237 (1992).Google Scholar
13. Xin, Y., Brown, P.D., Dunin-Borkowski, R.E., Humphreys, C.J., Cheng, T.S., and Foxon, C.T., J. Crystal. Growth, 171, 321 (1997).Google Scholar