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The Structure of Oxygen-Implanted (111) Silicon Before and After Heat-Pulse Annealing

Published online by Cambridge University Press:  26 February 2011

Z. Liliental-Weber ,
R. W. Carpenter  and
J. C. Kelly
Z. Liliental-Weber
Affiliation:
Now at: Materials and Molecular Research Division, Lawrence Berkeley Laboratory, 62-203, University of California, Berkeley, CA 94720, under Contract No. DE-ACO3-76SFO0098.
R. W. Carpenter
Affiliation:
Center for Solid State Science and School of Engineering and Applied Science, Arizona State University, Tempe, AZ 95287
J. C. Kelly
Affiliation:
Now at: School of Physics, University of New South Wales, Australia
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Abstract

The structure of (111) oriented, unheated oxygen-implanted silicon (dose -7.3×1016cm-2) has been studied by transmission electron microscopy (TEM). The as-implanted material exhibited four structurally different layers: defect-free monocrystaline silicon, amorphous silicon, monocrystalline silicon with a high defect density, and the perfect crystalline substrate. After heat-pulse annealing for 20s at 800°C, 900°C, or 1000°C, the amorphous layer recrystallized resulting in polycrystalline silicon, rich in oxygen. The uniform insulator buried layer was not formed under these specific implantation and annealing conditions.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 52: Symposium B – Rapid Thermal Processing , 1985 , 139
Copyright
Copyright © Materials Research Society 1986

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