Hostname: page-component-848d4c4894-x24gv Total loading time: 0 Render date: 2024-05-17T04:02:56.224Z Has data issue: false hasContentIssue false
  • English
  • Français

The Structure of Silicon Thin Films Grown on Sapphire by MBE

Published online by Cambridge University Press:  28 February 2011

M. E. Twigg ,
J. G. Pellegrino  and
E. D. Richmond
M. E. Twigg
Affiliation:
GEO-Centers Inc., 10903 Indian Head Highway #502, Fort Washington, MD 20744
J. G. Pellegrino
Affiliation:
Naval Research Laboratory, Code 6816, Washington, D.C. 20375.
E. D. Richmond
Affiliation:
Naval Research Laboratory, Code 6816, Washington, D.C. 20375.
Get access

Abstract

From a series of imaging experiments performed in the transmission electron microscope (TEM), it is apparent that for silicon grown on sapphire (SOS) by molecular beam epitaxy (MBE), silicon thin film growth on the (1012) sapphire plane resembles that observed for analogous films grown by chemical vapor deposition (CVD). At 900°C very thin (150A) silicon films grow as islands with either the (001) or (110) planes parallel to the (1012) plane; it is also found that most of the silicon grows as (001) rather than (110) islands, as is true for CVD-grown SOS. The orientation, however, of (110) islands occuring in this MBE-grown SOS sample differs from that of (110) islands occuring in CVD-grown SOS. By following this initial 150A of growth with 2500A of silicon deposited at. 750°C, a continuous (001) film was grown in which microtwins appear to be the predominant defect. The MBE-grown SOS also resembles that grown by CVD in that the microtwin densities associated with the “majority” and “minority” twinning systems are influenced by the orientation of the sapphire substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 389
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Abrahams, M. S., Buiocchi, C. J., Smith, R. T., Corboy, J. F. Jr., Blank, J., and Cullen, G. W., J. Appl. Phys. 47, 5139 (1976).Google Scholar
2 Lihl, R., Oppolzer, H., Pongratz, P., Skalicky, P., and Svanda, W., J. Microsc, 118, 89 (1980).Google Scholar
3 Smith, R. T. and Weizel, C. E., J. Cryst. Growth, 58, 61 (1982).Google Scholar
4 Bean, J. C., Appl. Phys. Lett., 36, 741 (1980).Google Scholar
5 Christou, A., Richmond, E. D., Wilkins, B. R., and Knudson, A. R., Appl. Phys. Lett., 44, 796 (1984).Google Scholar