Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by Crossref.
Taniguchi, K.
Shibata, Y.
and
Hamaguchi, C.
1990.
Process modeling and simulation: boundary conditions for point defect-based impurity diffusion model.
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems,
Vol. 9,
Issue. 11,
p.
1177.
Nguyen, Tai D.
Carl, D. A.
Hess, D. W.
Lieberman, M. A.
and
Gronsky, R.
1991.
Structural and Interfacial Characteristics of thin (<10 nm) SiO2 Films Grown by Electron Cyclotron Resonance Plasma Oxidation on [100] Si Substrates.
MRS Proceedings,
Vol. 223,
Issue. ,
Sofield, C J
and
Stoneham, A M
1995.
Oxidation of silicon: the VLSI gate dielectric.
Semiconductor Science and Technology,
Vol. 10,
Issue. 3,
p.
215.
Oppolzer, H.
and
Cerva, H.
1996.
Handbook of Microscopy.
p.
145.
1996.
Handbook of Microscopy Set.
p.
145.