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Studies of Interface Mixing in a Symmetrically Strained Ge/Si Superlattice

Published online by Cambridge University Press:  25 February 2011

R. C. Bowman ,
P. M. Adams ,
S. J. Chang ,
V. Arbet  and
K. L. Wang
R. C. Bowman
Affiliation:
The Aerospace Corporation, P. O. Box 92957, Los Angeles, CA 90009
P. M. Adams
Affiliation:
The Aerospace Corporation, P. O. Box 92957, Los Angeles, CA 90009
S. J. Chang
Affiliation:
Device Research Laboratory, Electrical Engineering Department, University of California, Los Angeles, CA 90024
V. Arbet
Affiliation:
The Aerospace Corporation, P. O. Box 92957, Los Angeles, CA 90009
K. L. Wang
Affiliation:
Device Research Laboratory, Electrical Engineering Department, University of California, Los Angeles, CA 90024
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Abstract

Raman scattering and x ray diffraction were used to study the effects of annealing on a Ge/Si superlattice that had been grown upon a Ge0.4Si0.6 alloy buffer layer which distributes the strain between the layers. Anneals above 910K caused substantial mixing at the Ge-Si interfaces. The interdiffusion coefficients obtained from the x-ray data were found to obey an Arrhenius relation with an activation energy of 3.1±0.2eV. Initial intermixing seems to be dominated by the diffusion of Si atoms into the Ge layers via a vacancy mechanism.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 347
Copyright
Copyright © Materials Research Society 1989

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References

[1] Kasper, E., Herzog, H. J., Jorke, H. and Abstreiter, G., Mat. Res. Soc. Symp. Proc., 102, 393, (1988)Google Scholar
[2] Kasper, E., Kibble, H., Jorke, H., Brugger, H., Friess, E. and Abstreiter, G., Phys. Rev. B., 38, 3599, (1988)Google Scholar
[3] Chang, S. J., Huang, C. F., Kallel, M. A., Wang, K. L., Bowman, R. C. Jr, and Adams, P. M., Appl. Phys. Lett., 53, 1835, (1988)Google Scholar
[4] Chang, S. J., Arbet, V., Wang, K. L., Kallel, M. A., Bowman, R. C. Jr, and Adams, P. M., Symp. Proc. SPIE, 1055, (In Press)Google Scholar
[5] Menedez, J., Pinczuk, A., Bevk, J. and Mannaerts, P., J. Vac. Sci. Technol. B, 6, 1306, (1988)Google Scholar
[6] Iyer, S. S., Tsang, J. C., Copel, M. W., Pukite, P. R. and Tromp, R. M., Appl. Phys. Lett., 54, 219, (1988)Google Scholar
[7] Brugger, H., Friess, E., Abstreiter, G., Kasper, E. and Kibble, H., Semicond. Sci. Technol., 3, 1166, (1988)CrossRefGoogle Scholar
[8] Chang, S. J., Wang, K. L., Bowman, R. C. Jr, and Adams, P. M., Appl. Phys. Lett., 54, 1235, (1989)Google Scholar
[9] Hollander, B., Mantl, S., Stritzker, B., Jorke, H. and Kasper, E., J. Mater. Res., 4, 163, (1989)Google Scholar
[10] Cardona, M., Superlatt. Microstr., 5, 27, (1989)Google Scholar
[11] Ospelt, M., Bacsa, W., Henz, J., Mader, K. A. and Kanel, H. von, Superlatt. Microstr., 5, 71, (1989)Google Scholar
[12] Greer, A. L. amd Spaepen, F., in Synthetic Modulated Structures, edited by Chang, L. L. and Giessen, B. C. (Academic Press, New York, 1985) p.419.Google Scholar
[13] Prokes, S. M. and Spaepen, F., Appl. Phys. Lett., 47, 234, (1985)Google Scholar
[14] Frank, W., Gosele, U., Mehrer, H. and Seeger, A., in Diffusion in Crystalline Solids, edited by Murch, G. E. and Nowich, A. S. (Academic Press, New York, 1984) p.63.Google Scholar
[15] Raisanen, J., Hirvonen, J. and Anttila, A., Solid State Elec., 24, 333, (1981)Google Scholar
[16] McVay, G. L. and Ducharme, A. R., Phys. Rev. B, 9, 627, (1974); G. L. McVay and A. R. Ducharme, Inst. Phy. Conf. Ser., 23, 91, (1975)Google Scholar
[17] Phillips, J. and VanVechten, J. A., Phys. Rev. Lett., 30, 220, (1972); T. Soma and A. Morita, J. Phys. Soc. Japan, 32, 357, (1972)Google Scholar
[18] Cook, H. E. and Hilliard, J. E., J. Appl. Phys., 40, 2191, (1969)Google Scholar