Hostname: page-component-76fb5796d-22dnz Total loading time: 0 Render date: 2024-04-26T01:32:18.687Z Has data issue: false hasContentIssue false
  • English
  • Français

Studies of Oxide Desorption From GaAs by Diffuse Electron Scatfering and Optical Reflectivity

Published online by Cambridge University Press:  16 February 2011

T. Van Buuren ,
T. Tiedje ,
M. K. Weilmeier ,
K. M. Colbow  and
J. A. Mackenzie
T. Van Buuren
Affiliation:
University of British Columbia, Department of Physics, Vancouver Canada, V6T2A6
T. Tiedje
Affiliation:
Also: Electrical Engineering Department
M. K. Weilmeier
Affiliation:
University of British Columbia, Department of Physics, Vancouver Canada, V6T2A6
K. M. Colbow
Affiliation:
University of British Columbia, Department of Physics, Vancouver Canada, V6T2A6
J. A. Mackenzie
Affiliation:
University of British Columbia, Department of Physics, Vancouver Canada, V6T2A6
Get access

Abstract

We have determined that the temperature for desorption of gallium oude from GaAs increases linearly with oxide thickness, for oxide layers between about 6Å and 26Å thick. Different thicknesses of oxide layers were created by varying the exposure time of the GaAs wafers to a low pressure oxygen plasma. In addition, we show by diffuse light scattering that highly polished GaAs substrates roughen during the oxide desorption. These results are interpreted in terms of a model in which the oxide evaporates inhomogeneously. The oxide desorption was also studied by monitoring the secondary electrons produced by the high energy electrons from the RHEED gun. After the gallium oxide desorption there is a reversible, order of magnitude, increase in the number of secondary electrons produced. We interpret this result as evidence for the formation of microscopic gallium droplets on the GaAs surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 222: Symposium D – Atomic Layer Growth and Processing , 1991 , 93
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. McClintock, J.A., Wilson, R.A. and Byer, N.E.; J. Vac. Sci. Tech. 20, 241 (1982).CrossRefGoogle Scholar
2. Ingrey, S.J., Lau, W.M. and McIntyre, N.S.; J. Vac. Sci. Tech. A4, 984 (1986).Google Scholar
3. SpringThorpe, A.J., Ingrey, S.J., Emmerstorfer, B., Mandeville, P. and Moore, W.T.; Appl. Phys. Lett. 50, 77 (1987).Google Scholar
4. Weilmeier, M.K., Colbow, J.M., Tiedje, T., Van Buuren, T. and Xu, Li; Can. J. Phys. (to be Published 1991).Google Scholar
5. Thurmond, C.D.; J. Electrochem. Soc. 122, 1133 (1975)Google Scholar
6. Van Buuren, T., Tiedje, T., et. al., Appl. Phys. Lett. (to be Published 1991)Google Scholar
7. Isernia, L.; Johnson-Matthey Electronics (Private Communication)Google Scholar
8. Lavoie, C., (Private Communication)Google Scholar
9. Gibson, E.M., Foxon, C.T., Zhang, J. and Joyce, B.A.; Appl. Phys. Lett. 57, 1203 (1990).Google Scholar