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Study by Weak Beam and HRTEM of double stacking faults created by external mechanical stress in 4H-SiC

Published online by Cambridge University Press:  15 March 2011

Hosni Idrissi ,
Maryse Lancin ,
Joel Douin ,
Gabrielle Regula ,
Bernard Pichaud ,
Rachid El Bouayadi  and
Jean-Marc Rousse
Hosni Idrissi
Affiliation:
TECSEN, UMR-6122, Université Aix-Marseille III, 13397 Marseille-cedex20 -, France
Maryse Lancin
Affiliation:
TECSEN, UMR-6122, Université Aix-Marseille III, 13397 Marseille-cedex20 -, France
Joel Douin
Affiliation:
LEM, CNRS-ONERA, BP 72, 92332, Chatillon-cedex-, France
Gabrielle Regula
Affiliation:
TECSEN, UMR-6122, Université Aix-Marseille III, 13397 Marseille-cedex20 -, France
Bernard Pichaud
Affiliation:
TECSEN, UMR-6122, Université Aix-Marseille III, 13397 Marseille-cedex20 -, France
Rachid El Bouayadi
Affiliation:
TECSEN, UMR-6122, Université Aix-Marseille III, 13397 Marseille-cedex20 -, France
Jean-Marc Rousse
Affiliation:
TECSEN, UMR-6122, Université Aix-Marseille III, 13397 Marseille-cedex20 -, France
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Abstract

4H-SiC samples are bent in compression mode at 550°C and 620°C. The introduced-defects are identified by Weak Beam and HRTEM techniques. They consist of double stacking faults bounded by 30° Si(g) partial dislocations whose glide locally transforms the material in its cubic phase. The velocity of partial dislocations is measured after chemical etching of the sample surface. The formation and the expansion of the double stacking faults are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 815 , 2004 , J7.2
Copyright
Copyright © Materials Research Society 2004

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