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A Study of APCVD-Deposited TiO2Characteristics in the Structure of a Tunneling Transistor

Published online by Cambridge University Press:  28 July 2011

A. Behnam ,
B. Hekmatshoar ,
S. Mohajerzadeh ,
B. Arvan ,
F. Karbassian  and
A. Khakifirooz
A. Behnam
Affiliation:
Department of Electrical and Computer Engineering, Thin Film laboratory, University of Tehran, Tehran, Iran, +98-21 801 1235
B. Hekmatshoar
Affiliation:
Department of Electrical and Computer Engineering, Thin Film laboratory, University of Tehran, Tehran, Iran, +98-21 801 1235
S. Mohajerzadeh
Affiliation:
Department of Electrical and Computer Engineering, Thin Film laboratory, University of Tehran, Tehran, Iran, +98-21 801 1235, e-mail: smohajer@vlsi.uwaterloo.ca
B. Arvan
Affiliation:
Department of Electrical and Computer Engineering, Thin Film laboratory, University of Tehran, Tehran, Iran, +98-21 801 1235
F. Karbassian
Affiliation:
Department of Electrical and Computer Engineering, Thin Film laboratory, University of Tehran, Tehran, Iran, +98-21 801 1235
A. Khakifirooz
Affiliation:
Department of Electrical and Computer Engineering, Thin Film laboratory, University of Tehran, Tehran, Iran, +98-21 801 1235
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Abstract

TiO2 and nickel-silicide layers are consequently deposited and micro machined to compose a mesa-structured tunneling transistor. The depositions are done with the RF-sputtering method and the electrical and physical characteristics of the products are investigated. Transistors show an amplification coefficient of about 20. To improve the quality and coverage of the TiO2 layer, the oxide deposition is made by means of an APCVD reactor. The grown oxide shows a dielectric coefficient between 19 and 21 and its breakdown field is about 107 V/cm.

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References

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