Hostname: page-component-8448b6f56d-t5pn6 Total loading time: 0 Render date: 2024-04-23T14:18:30.360Z Has data issue: false hasContentIssue false
  • English
  • Français

Study of a-Si:H / c-Si Heterojunctions for PV Applications

Published online by Cambridge University Press:  10 February 2011

F. Zignani ,
R. Galloni ,
R. Rizzoli ,
M. Ruth ,
C. Summonte ,
R. Pinghini ,
Q. Zini ,
P. Rava ,
A. Madan  and
Y. S. Tsuo
F. Zignani
Affiliation:
Dipartimento di Chimica Applicata e Scienza dei Materiali, Bologna University, viale Risorgimento 2, 40136 Bologna, Italy
R. Galloni
Affiliation:
CNR-Lamel, via Gobetti 101,40129 Bologna, Italy
R. Rizzoli
Affiliation:
CNR-Lamel, via Gobetti 101,40129 Bologna, Italy
M. Ruth
Affiliation:
CNR-Lamel, via Gobetti 101,40129 Bologna, Italy
C. Summonte
Affiliation:
CNR-Lamel, via Gobetti 101,40129 Bologna, Italy
R. Pinghini
Affiliation:
CNR-Lamel, via Gobetti 101,40129 Bologna, Italy
Q. Zini
Affiliation:
CNR-Lamel, via Gobetti 101,40129 Bologna, Italy
P. Rava
Affiliation:
Elettrorava S.p.A., via Don Sapino 176, 10040 Savonera (Torino), Italy
A. Madan
Affiliation:
MVSystems, Inc., 327 Lamb Lane, Golden, CO 80401, USA
Y. S. Tsuo
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden CO 80401, USA
Get access

Abstract

a-Si:H / c-Si heterojunction diodes were produced by PECVD with varying amorphous silicon layer thickness and hydrogen dilution of the gas phase. An accurate determination of the growth rate also in the initial stages of the deposition was made possible by an original chemical method based on the dissolution of the films followed by spectroscopical analysis of the obtained solution.

The electrical characterization of the diodes confirms the generation - recombination - multitunneling nature of the transport. Although H2 dilution is important, however, beyond a certain level it is detrimental for the junction quality, probably due to the transition to a microcrystalline phase deposition. Solar cells were also produced, the best results being an open circuit voltage of 610 mV and an intrinsic efficiency of 14.2%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 45
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Sawada, T., Terada, N., Tsuge, S., Baba, T., Takahama, T., Wakisaka, K., Tsuda, S., Nakano, S, Proc. I st WCPEC, Hawaii, December 1994, p. 1219.Google Scholar
2. Sala, D. Della, Grillo, P., Parisi, S., Francia, G. Di, Roca, F., Proc. 13th E-PVSEC, Nice, October 1995, in press.Google Scholar
3. Higashi, G.S., Chabal, Y.J., Trucks, G.W., Raghavachari, K., Appl. Phys. Lett 56, 656 (1990)Google Scholar
4. Buldini, P.L., Zini, Q., Ferri, D., J. Electrochem. Soc. 128,1062 (1981).Google Scholar
5. Zini, Q., Buldini, P.L., Morettini, L., Microchem. J. 32, 148 (1985).Google Scholar
6. Tsai, C.C., Anderson, G.B., Thompson, R., B Wacker, J. of Non-Cryst. Solids 114, 151 (1989).Google Scholar
7. van Cleef, M.W.M., Rubinelli, F.A., Owens, J. Daey and Schropp, R.E.I., 13th E-PVSEC, Nice, October 1995, in press.Google Scholar
8. Keppner, H., Torres, P., Fliickiger, R., Meier, J., Shah, A., Fortmann, C., Fath, P, Willeke, G., Happle, K., Kiess, H., Solar Energy Mat. and Solar Cells 34, 201 (1994).Google Scholar
9. Eschrich, H., Elstner, L., Bruns, J., Proc. 12th E-PVSEC, Amsterdam, Apr. 11 – 15, 1994, p. 172.Google Scholar
10. Hovel, H. J. Ed., Semiconductors. and Semimetals vol II, Solar Cells, Academic Press, New York 1975, p.54 Google Scholar
11. Matsuura, H., Okuno, T., Okushi, H., Tanaka, K., J. Appl. Phys. 55 (1984) 1012 Google Scholar
12. Fahrenbruch, A.L. and Bube, R.H., Fundamentals of Solar Cell - Photovoltaic Solar Energy conversion, Academic Press, New York 1983, p. 135 and 152.Google Scholar