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Study of Interfacial Sharpness and Growth in (GaAs)M(AlAs)N Superlatihces

Published online by Cambridge University Press:  25 February 2011

D. Gammon ,
S. Prokes ,
D.S. Katzer ,
B.V. Shanabrook ,
M. Fatemi ,
W. Tseng ,
B. Wilkins  and
H. Dietrich
D. Gammon
Affiliation:
Naval Research Laboratory, Washington DC 20375-5000
S. Prokes
Affiliation:
Naval Research Laboratory, Washington DC 20375-5000
D.S. Katzer
Affiliation:
Naval Research Laboratory, Washington DC 20375-5000 ONT Postdoctoral Fellow
B.V. Shanabrook
Affiliation:
Naval Research Laboratory, Washington DC 20375-5000
M. Fatemi
Affiliation:
Naval Research Laboratory, Washington DC 20375-5000
B. Wilkins
Affiliation:
Naval Research Laboratory, Washington DC 20375-5000
H. Dietrich
Affiliation:
Naval Research Laboratory, Washington DC 20375-5000
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Abstract

X-ray diffraction, inelastic light scattering, photoluminescence and photoluminescence excitation spectroscopies have been employed to study the effects of growth conditions on the interfacial sharpness of GaAs/AlAs superlattices. In addition to describing which changes in the MBE growth procedures result in the sharpest interfaces, this study addresses the relative strengths and weaknesses of the experimental probes employed in the examination of interfacial irregularities.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 159: Symposium C – Atomic Scale Structure of Interfaces , 1989 , 339
Copyright
Copyright © Materials Research Society 1990

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References

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