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Study of sputtered Hafnium oxide Films for Sensor Applications

Published online by Cambridge University Press:  01 February 2011

H. Grüger
Affiliation:
Fraunhofer IPMS, Grenzstr. 28, 01109 Dresden, Germany
C. Kunath
Affiliation:
Fraunhofer IPMS, Grenzstr. 28, 01109 Dresden, Germany
E. Kurth
Affiliation:
Fraunhofer IPMS, Grenzstr. 28, 01109 Dresden, Germany
S. Sorge
Affiliation:
Fraunhofer IPMS, Grenzstr. 28, 01109 Dresden, Germany
W. Pufe
Affiliation:
Fraunhofer IPMS, Grenzstr. 28, 01109 Dresden, Germany
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Abstract

In this paper results of the deposition and annealing of hafnium oxide thin films are reported. Due to the sensor application in mind, thicknesses between 30 and 150 nm have been deposited by r.f. sputtering of a high purity oxide target. Annealing has an important influence on the layer structure, stress and application correlated properties. A detailed understanding of the layer preparation is necessary to adjust deposition and annealing. After deposition the layers are predominately amorphous, annealing leads to textured layers with monocline or orthorhombic phases.

Besides gas sensor applications optimized layers may serve as protective coating or combined with a second material to multi layer stacks as high reflective dielectric mirror.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

1. Lebedinskii, Yu et al., “Silicide formation at HfO2/Si and ZrO2/Si interface induced by Ar+ ion bombardmentMat. Res. Soc. Symp. Proc. 768 (2004) E3.25, 165 Google Scholar
2. Duenas, S. et al., “On the interface quality of MIS structures fabricated from Atomic Layer Depostion of HfO2, Ta2O5 and Nb2O5-Ta2O5-Nb2O5 dielectric thin filmsMat. Res. Soc. Symp. Proc. 786 (2004) E3.18 1Google Scholar
3. Kukli, Kaupo et al. “Effect of selected atomic layer deposition parameters on the structure and properties of hafnium oxide filmsJ. Appl. Phys. 96 (2004) 5298 Google Scholar
4. Balasubramanian, M. et al. “Wet etching characteristics and surface morphology of MOCVD grown HfO2 filmsThin Solid Films 462463 (2004) 101 Google Scholar
5. Onishi, K., Kang, C., Choi, R., Cho, H.-J., Kim, Y., Krishnan, S., Lee, J. C.Performance of polysilicon gate HfO2 MOSFETs on (100) and (111) Silicon substratesIEEE Electron Device Letter 24 (2003) 254 Google Scholar
6. Grüger, H., Kunath, C., Kurth, E., Pufe, W., Sorge, S. “Improved structural properties of sputtered hafnium dioxide on silicon and silicon oxide for semiconductor and sensor applications” Proceedings of the Materials Research Society Fall Meeting 2003 Google Scholar
7. Grüger, H., Kunath, C., Kurth, E., Sorge, S., Pechstein, T. “High quality r.f. sputtered metal oxides (Ta2O5, HfO2) and their properties after annealing”, Solid Films 447–448 (2004) 509–515Google Scholar
8. Manory, R., Mor, T., Shimizu, I., Miyake, S., Kimmel, G.Growth and structure control of HfO2-x films with cubic and tetragonal structures obtained by ion beam assisted depositionJ. Vac. Scie. Technol. A20 (2002) 549 Google Scholar