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A Study of the Effect of Oxide Structure on the Synthesis of Nanocrystalline Ge from Si1-xGexO2

Published online by Cambridge University Press:  21 February 2011

Juliana M. Blaser ,
Christine Caragianis-Broadbridge ,
Barbara L. Walden  and
David C. Paine
Juliana M. Blaser
Affiliation:
Brown University, Division of Engineering, Providence, RI 02912
Christine Caragianis-Broadbridge
Affiliation:
Trinity College, Department of Engineering and Computer Science, Hartford, CT 06106
Barbara L. Walden
Affiliation:
Trinity College, Department of Physics, Hartford, CT 06106
David C. Paine
Affiliation:
Brown University, Division of Engineering, Providence, RI 02912
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Abstract

In this study, Si1-xGexO2 was produced by hydrothermal oxidation of Si1-xGex alloys at temperatures of 450–500°C and pressures of 30–40 MPa. The resulting Si1-xGexO2 samples were annealed in forming gas (85/15:N2/H2) and the precipitation and growth of Ge crystallites as a function of oxidation and annealing conditions were investigated using FTIR, Raman spectroscopy, XPS, AFM and high resolution SEM. The particle size distribution through the oxide thickness is accounted for by consideration of the incorporation of hydroxyl groups in the amorphous oxide network and their effect on the rate of diffusion of Ge in the amorphous structure during H2 annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 398: Symposium C – Thermodynamics and Kinetics of Phase Transformations , 1995 , 619
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1 Shcheglov, K. V., Yang, C. M., Vahala, K. J., and Atwater, H. A., Appl. Phys. Lett. 66 (6), 745 (1994).Google Scholar
2 Kanemitsu, Y., Hiroshi, U., Masumoto, Y., and Maeda, Y., Appl. Phys. Lett. 61 (18), 2187 (1992).Google Scholar
3 Paine, D. C., Caragianis, C., Kim, T. Y., Shigesato, Y., and Ishahara, T., Appl. Phys. Lett. 62, 2842 (1993).Google Scholar
4 Maeda, Yoshihito, Physical Review B 51 (3), 1658 (1995).Google Scholar
5 Paine, D. C., Caragianis, C., and Schwartzman, A. F., J. Appl. Phys. 70 (9), 5076 (1991).Google Scholar
6 Paine, D. C., Kim, T. Y., Caragianis, C., and Shigesato, Y., Journal of Electronic Materials 23 (9) 1994.Google Scholar
7 Caragianis, C., Shigesato, Y., and Paine, D. C., Journal of Electronic Materials 23 (9), 883 (1994).Google Scholar
8 Paine, D.C., Caragianis, C., Kim, T. Y., and Shigesato, Y. in MRS Symposium on Microcrystalline Semiconductors Materials Science and Devices, edited by Aoyagi, Y., (Mater. Res. Soc. Proc. 283, Boston, MA, 1993) pp. 51–55.Google Scholar
9 Margaryan, A. and Piliavin, M. J.. Germanate Glasses: Structure. Spectroscopy. and Properties. (Artech House, Inc., Boston, 1993), p. 11.Google Scholar