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A Study of the State Distribution in Various a-Si:H Materials by a New Capacitance Method

Published online by Cambridge University Press:  26 February 2011

I. Balberg
I. Balberg*
Affiliation:
The Racah Institute of Physics, The Hebrew University, Jerusalem, 91904, Israel.
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Abstract

A new method for the determination of the deep states density in amorphous semiconductors is presented. The method is based on the carriersemission- time dependence of the capacitance-voltage characteristics of Schottky barriers. The applicability of the method for the study of hydrogenated amorphous silicon materials is demonstrated. The pitfalls associated with trying to deduce the density of states from a single capacitance-voltage characteristic are also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 89
Copyright
Copyright © Materials Research Society 1987

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References

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