Hostname: page-component-848d4c4894-wg55d Total loading time: 0 Render date: 2024-05-05T00:22:41.850Z Has data issue: false hasContentIssue false
  • English
  • Français

Study on End-of-Range Defects Induced by Sb Implantation

Published online by Cambridge University Press:  01 February 2011

Yi-Sheng Lai ,
J. S. Chen ,
Y. S. Ho ,
H. L. Sun  and
K. B. Huang
Yi-Sheng Lai
Affiliation:
Department of Materials Science and Engineering, National Cheng Kung University, Tainan, TAIWAN
J. S. Chen
Affiliation:
Department of Materials Science and Engineering, National Cheng Kung University, Tainan, TAIWAN
Y. S. Ho
Affiliation:
Department of Diffusion & CMP, Taiwan Semiconductor Manufacturing Company, Tainan, TAIWAN
H. L. Sun
Affiliation:
Department of Diffusion & CMP, Taiwan Semiconductor Manufacturing Company, Tainan, TAIWAN
K. B. Huang
Affiliation:
Department of Diffusion & CMP, Taiwan Semiconductor Manufacturing Company, Tainan, TAIWAN
Get access

Abstract

Extended defects formed by antimony ion implantation in Si(100) was investigated as a function of the implant energy. The implanted layer was examined by cross-sectional electron microscopy (TEM). Post-implantation spike-annealing was also performed from 950°C to 1095°C to examine evolution of defects. From the TEM study, the threshold energy to induce visible defects for Sb implantation was found to be more than 50 keV. A mapping for the location of defects was constructed by TEM and secondary ion mass spectroscopy (SIMS). The end-of-range (EOR) defects, which were possibly formed during the solid phase epitaixy regrowth, were located near the lower bound of the transition region. For 70-keV implantation, extended defects appear at the near-surface and the EOR region. It was observed that the near-surface defects diminished after annealing at more than 1050°C, while the EOR defects became coarsening at 1095°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 792: Symposium R – Radiation Effects and Ion Beam Processing of Materials , 2003 , R3.13
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Claverie, A., Colombeau, B., de Mauduit, B., Bonafos, C., Hebras, X., Assayag, G. B., and Cristiano, F., Appl. Phys. A 76, 1025 (2003).Google Scholar
2. Gyulai, J., in Handbook of Ion Implantation Technology, edited by Ziegler, J. F., (Elsevier Science, North-Holland, 1992), pp. 69–117.Google Scholar
3. Jones, K. S. and Rozgonyi, G. A., in Rapid Thermal Processing – Science and Technology, edited by Fair, R. B., (Academic Press, CA, 1993), pp. 123–168.Google Scholar
4. Motooka, T. and Holland, O. W., Appl. Phys. Lett. 61, 3005 (1992).Google Scholar
5. Clark, M. H., Jones, K. S., Haynes, T. E., Barbour, C. J., Minor, K. G., and Andideh, E., Appl. Phys. Lett. 80, 4163 (2002).Google Scholar
6. Skarlatos, D., Tsamis, C., and Tsoukalas, D., J. Appl. Phys. 93, 1832 (2003).Google Scholar
7. Wu, I. W. and Chen, L. J., J. Appl. Phys. 58, 3032 (1985).Google Scholar
8. Haynes, T. E. and Holland, O. W., Appl. Phys. Lett. 58, 62 (1991).Google Scholar
9. Robertson, L. S., Lilak, A., Law, M. E., Jones, K. S., Kringhoj, P. S., Rubin, L. M., Jackson, J., Simons, D. S., and Chi, P., Appl. Phys. Lett. 71, 3105 (1997).Google Scholar
10. Jones, K. S., Prussin, S., and Weber, E. R., J. Appl. Phys. 62, 4114 (1987).Google Scholar
11. Dąbrowski, J., Müssig, H. J., Wolff, G., Hinrich, S., Surf. Sci. 411, 54 (1998).Google Scholar
12. Ziegler, J. F. and Biersack, J. P., The calculations were performed with the program SRIM 2003. Available from the website http://www.srim.org.Google Scholar