Hostname: page-component-76fb5796d-5g6vh Total loading time: 0 Render date: 2024-04-25T12:55:32.771Z Has data issue: false hasContentIssue false
  • English
  • Français

The Study on Microstructure by NMR, FTIR, Raman, Conductivity and Optical Bandgap in Hydrogenated Amorphous Silicon Prepared by Novel Fabrication Methods

Published online by Cambridge University Press:  21 February 2011

K. C. Hsu ,
H. Chang ,
C. S. Hong  and
H. L. Hwang
K. C. Hsu
Affiliation:
Department of Electrical Engineering, National Tsing-Hua University, Hsin-Chu, Taiwan, R.O.C.
H. Chang
Affiliation:
Department of Chemistry, National Tsing-Hua University, Hsin-Chu, Taiwan, R.O.C.
C. S. Hong
Affiliation:
Center for Aviation & Space Technology, I.T.R.I., Hsin-Chu, Taiwan, R.O.C.
H. L. Hwang
Affiliation:
Department of Electrical Engineering, National Tsing-Hua University, Hsin-Chu, Taiwan, R.O.C.
Get access

Abstract

It was found that hydrogen dilution in the SiH4/H2 mixture tend to show a sharp line-shape in the NMR spectra as the substrate temperature is higher than 300 °C. The hydrogen-atom-treatment method also produces the same effect at a lower substrate temperature about 250°C. The Raman scattering spectra show that the hydrogen-atom-treatment creates the microcrystalline structure at a temperature higher than 250°C while hydrogen dilution produces mixed phases containing amorphous phase and a small quantity of micro-crystalline phase. Together with the optical bandgap narrowing, the increase of the dark conductivity and the reduction of photo-to-dark conductivity ratio, these samples indicate that with more hydrogen incorporation during deposition and plasma hydrogen treatment, these films possess a much compact structure, and the degree of crystallinity of hydrogenated silicon film was found to be systematically changed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 69
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. kumeda, K., Yonezawa, Y., Morimoto, A., Suda, S. and Shimizu, T., J. Non. Cryst. Solid, 59&60, 775 (1983).Google Scholar
2. Hayashi, S., J. Non. Cryst. Solid, 59&60, 779 (1983).Google Scholar
3. Miyachi, K., Koyama, M., Tanaka, H., Ashida, Y., Fukuda, N., Nitta, A., Tech. Digest. PVSEC-5, Kyoto, Jpn, 63 (1990).Google Scholar
4. Shirai, H., Das, D., Hanna, J., and Shimizu, I., Tech. Digest. PVSEC-5, Kyoto, Jpn, 59 (1990).Google Scholar
5. Reimer, J. A. and Vaughan, R. W., Phys. Rev. B 24, 3360 (1981).Google Scholar
6. Carlos, W. E. and Taylor, P. C., Phys. Rev. B 26, 3605 (1982).Google Scholar
7. Mavi, H. S., Jain, K. P., Shukla, A. K., and Abbi, S. C., J. Appl. Phys, 69, 3969 (1991).Google Scholar
8. Lee, M. C., Huang, C. R., Chang, Y. S., and Chao, Y. F., Phys. Rev. B40, 10420 (1990).Google Scholar