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Subboundary Spacing and Appearance in Laser Zone-MeltingRecrystallization of Silicon Onamorphous Substrate

Published online by Cambridge University Press:  25 February 2011

J.P. Joly ,
J.M. Hode  and
J.C. Castagna
J.P. Joly
Affiliation:
L.E.T.I. -C.E.A. -I.R.D.I. -Commissariat A lEnergie Atomique LETI -CENG -85 X -38041 Grenoble Cedex -FRANCE
J.M. Hode
Affiliation:
L.E.T.I. -C.E.A. -I.R.D.I. -Commissariat A lEnergie Atomique LETI -CENG -85 X -38041 Grenoble Cedex -FRANCE
J.C. Castagna
Affiliation:
L.E.T.I. -C.E.A. -I.R.D.I. -Commissariat A lEnergie Atomique LETI -CENG -85 X -38041 Grenoble Cedex -FRANCE
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Abstract

Recrystallized silicon films on amorphous substrates are mainlycharacterized by subgrain boundaries separated by a few microns. Usingseedina from the silicon substrate (lateral epitaxy), subboundary free areasadjacent to the seed are achieved in the direction of the beam scanninq. Wehave demonstrated the large influence of the growth direction and of thethickness of the silicon layer together on the incubation distance and onthe spacing of the subboundaries. Surprisingly, a variation of the arowth(scan) velocity of two orders of magnitude (from 1 to 70 cm/s) has nonoticeable influence on these narameters. A I × 10 elliptical Ar+laser beam has been used in these experiments. An interpretation of theseresults in terms of lateral (step) growth and stress will be given.

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References

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