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Subcritical Debonding of Multilayer Interconnect Structures: Temperature and Humidity Effects

Published online by Cambridge University Press:  10 February 2011

Michael Lane ,
Reiner Dauskardt ,
Qing Ma ,
Harry Fujimoto  and
Nety Krishna
Michael Lane
Affiliation:
Department of Materials Science and Engineering, Stanford University
Reiner Dauskardt
Affiliation:
Department of Materials Science and Engineering, Stanford University
Qing Ma
Affiliation:
Intel Corp., Santa Clara, CA
Harry Fujimoto
Affiliation:
Intel Corp., Santa Clara, CA
Nety Krishna
Affiliation:
Applied Materials, Santa Clara, CA
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Abstract

Thin film structures may fail by progressive or time-dependent debonding at stresses far below those required for catastrophic failure. Previous work has shown that progressive debonding in a typical interconnect structure occurs either along the TiN/SiO2 interface or parallel to this interface in the SiO2 Such subcritical debonding was found to span several orders of magnitude of debond growth rates and occur at significantly reduced driving forces. The presence of SiO2 at the failure location indicates that the mechanisms which give rise to stress corrosion cracking in bulk glasses may also play a role in the subcritical debonding behavior of multilayer interconnect structures. Accordingly, this work focuses on the effects of temperature and humidity on subcritical debonding and rationalizes them in terms of the relevant chemical reactions taking place at the debond tip.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 563: Symposium M – Materials Reliability in Microelectronics IX , 1999 , 251
Copyright
Copyright © Materials Research Society 1999

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References

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