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Submicron Roughness Determination at the Si-SiO2 Interface and Correlations to Prccessing Steps and Electronic Properties

Published online by Cambridge University Press:  22 February 2011

Peter O. Hahn ,
I. Lampert  and
A. Schnegg
Peter O. Hahn
Affiliation:
Wacker-Chemitronic GmbH, Research Center, D-8263 Burghausen, FRG
I. Lampert
Affiliation:
Wacker-Chemitronic GmbH, Research Center, D-8263 Burghausen, FRG
A. Schnegg
Affiliation:
Wacker-Chemitronic GmbH, Research Center, D-8263 Burghausen, FRG
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Abstract

A newly developed optical surface characterization technique using the diffuse scattered light of two laser beams will be presented. The method determines root-mean-square roughness values (RMS) of surfaces down to 1 Å and corresponding correlation lengths in the submicron area.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 105: Symposium F – SiO2 and Its Interfaces , 1987 , 247
Copyright
Copyright © Materials Research Society 1988

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