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Suppression of Parasitic BJT Action in Single Pocket Thin Film Deep Sub-Micron SOI MOSFETs.

  • Najeeb-ud-Din (a1), Aatish K. Mohan (a1), V. Dunga (a1), V. Ramgopal Rao (a1) and J. Vasi (a1)...
Abstract
Abstract

A study of parasitic bipolar junction transistor effects in single pocket thin film siliconon-insulators (SOI) nMOSFETs has been carried out. Characterization and simulation results show that parasitic bipolar junction transistor action is reduced in single pocket SOI MOSFETs in comparison to homogeneously doped conventional SOI MOSFETs. A novel Gate-Induced-Drain-Leakage (GIDL) current technique was used to characterize the SOI MOSFETs. 2 - D simulations were carried out to analyze the reduced parasitic bipolar junction effect in single pocket thin film SOI MOSFETs.

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1.Colinge J. P., Silicon-on-Insulator Technology: Materials to VLSI (2nd Edition), Kluwer Academic Publishers Boston, USA, 1997.
2.Colinge J. P., “Fully Depleted SOI CMOS for Analog Applications,” IEEE Trans. Electron Devices, vol. 45, pp.10101016, May 1998.
3.Choi Jin-Young, and Fossum Jerry G., “Analysis and Control of Floating-Body Bipolar Effects in Fully Depleted Submicrometer SOI MOSFETs”, IEEE Trans. Electron Devices, vol. 38, pp.13841391, June 1991.
4.Chen C. E. D., Matloubian M., Sundaresan R, Mao B. Y., C C. Wei and Pollack G.P., “Single transistor latch in SOI MOSFET's,” IEEE Electron Device Lett., vol. 9, pp.636638, Dec, 1988.
5.Young K.K. and Burns J.A., “Avalanche- induced drain-source breakdown in silicon-oninsulator n-MOSFET's,” IEEE Trans. Electron Devices, vol. 35, pp.426431, Apr. 1988.
6.Okumura Y., Shirahata M., Okudaira T., Hachisuka A., Arima H., Matsukawa T. and Tsoubuchi N., IEEE IEDM Tech. Dig., San Francisco, California, p. 391, 1990.
7.Cheng B., Rao V. Ramgopal, Ikegami B., and Woo J.C.S., “Realization of sub 100 nm asymmetric Channel MOSFETs with Excellent Short-Channel Performance And Reliability”, Technical Digest, 28th European Solid-State Device Research Conference (ESSDERC), Bordeaux, France, 1998.
8.Cheng B., Inani A., Rao V. Ramgopal, and Woo J.C.S., “Channel Engineering for High Speed Sub-1.0 V Power Supply Deep Sub-Micron CMOS”, Technical Digest, Symposium on VLSI Technology, Kyoto, Japan, pp.6970, 1999.
9.Miyamoto M., Toyota K., Seki K., and Nagano T., “An asymmetrically doped buried.layer (ADB) structure for low.voltage mixed analog-digital CMOS LSI's,” IEEE Trans. Electron Devices, vol. 46, pp.16991704, 1999.
10.Cheng B., Rao V. Ramgopal, and Woo J. C. S., “Sub 0.18 um SOI MOSFETs Using Lateral Asymmetric Channel Profile and Ge Pre-amorphization Salicide Technology”, Proceedings of the IEEE International SOI Conference, Stuart, Florida, USA, pp.113114, 1998.
11.TSPREM4, two-dimensional process Simulation Program, version 4.1, Technology Modeling Associates, Inc., Sunnyvale, California.
12.Chan T. Y., Chen J., Ko P. K., and Hu C., “The impact of gate-induced-drain-leakage on MOSFET scaling”, IEEE IEDM Technical Digest, pp. 718721, 1987.
13.Chen J., Assaderaghi F., Ko P. K., and Hu C., “The enhancement of Gate-Induced-Drain-Leakage current in short-channel SOI MOSFET and its application in measuring lateral bipolar current gain β”, IEEE Electron Device Lett., vol. 13, pp. 572574, 1992.
14.Medici, two-dimensional Device Simulation Program, version 4.0, Technology Modeling Associates, Inc., Sunnyvale, California, USA.
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