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Surface and Interface Characterization of Ion Beam Re-crystallized Si

Published online by Cambridge University Press:  11 February 2011

P. K. Sahoo ,
B. Satpati ,
S. Dey ,
P. V. Satyam ,
T. Som  and
V. N. Kulkarni
P. K. Sahoo
Affiliation:
Department of Physics, Indian Institute of Technology Kanpur, Kanpur 208 016, India.
B. Satpati
Affiliation:
Institute of Physics, Bhubaneswar 751 001, India.
S. Dey
Affiliation:
Department of Physics, Indian Institute of Technology Kanpur, Kanpur 208 016, India.
P. V. Satyam
Affiliation:
Institute of Physics, Bhubaneswar 751 001, India.
T. Som
Affiliation:
Institute of Physics, Bhubaneswar 751 001, India.
V. N. Kulkarni
Affiliation:
Department of Physics, Indian Institute of Technology Kanpur, Kanpur 208 016, India. Center for Superconductivity Research, Dept. of Physics, Univ. of Maryland, College Park.
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Abstract

In the present work we have studied efficacy of ion beam induced epitaxial crystallization (IBIEC) to recover amorphous layers (300 – 350 nm) produced by MeV Kr ions in Si(100) and studied the associated changes occurring on surface and interface of the recrystallized region. IBIEC experiments were carried out at sample temperatures in the range of 200 − 400°C using 1 MeV N+ ion beam. Rutherford backscattering-Channeling technique showed planar and gradual recovery of the amorphous layer as a function of temperature. Transmission electron microscopy measurements show good crystalline structure of the recovered region at 400°C while at lower temperatures nano-crystalline Si formation embedded in the amorphous structure is evident. The surface topography studied by atomic force microscopy shows development of islands after IBIEC. The rms roughness is around 0.5 nm and average height of the islands is found to be 1.8 nm. The observed epitaxial growth and the surface topographical features have been correlated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 750: Symposium Y – Surface Engineering 2002–Synthesis, Characterization and Applications , 2002 , Y9.12
Copyright
Copyright © Materials Research Society 2003

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References

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