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Surface Contamination Level of GaAs Wafers Treated with Solutions of Organic Base Measured by Total Reflection X-Ray Fluorescence (TXRF)

Published online by Cambridge University Press:  25 February 2011

H. Shibaya ,
H. Kondo  and
K. Tomizawa
H. Shibaya
Affiliation:
Mitsubishi Materials Corporation, Compound Semiconductor Center, 1–297 Kitabukuro-cho. Omlya, Saltama, 330, Japan
H. Kondo
Affiliation:
Mitsubishi Materials Corporation, Central Research Institute, 1–297 Kltabukuro-cho, Omiya, Saitama, 330, Japan
K. Tomizawa
Affiliation:
Mitsubishi Materials Corporation, Compound Semiconductor Center, 1–297 Kitabukuro-cho. Omlya, Saltama, 330, Japan
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Abstract

Contamination level of chemically cleaned (100) GaAs wafer surfaces were measured by Total reflection X-Ray Fluorescence (TXRF). Cu and Zn were detected as major metallic Impurities on GaAs surfaces. The Cu contamination level was in the range of 1011 atoms/cm2 on wafers treated with NH4 OH/H2O2 /H2O (80:1:400) mixture. On the other hand, Cu could be reduced to less than 5×1010 atoms/cm2 and Zn could be controlled below the detection limit by treating with a choline/H2O2 /H20/Na5P3O10 or SEMICO-CLEAN 23/H2O2 /Na5P3O10 solution. Surface cleanliness depended on the H2O2 concentration and whether or not Na5P3O10 was present in the organic base solutions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 329
Copyright
Copyright © Materials Research Society 1992

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References

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