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Surface Evaluation of 6H-SiC after Doping by Diffusion

Published online by Cambridge University Press:  21 March 2011

Ying Gao ,
S. I. Soloviev  and
T. S. Sudarshan
Ying Gao
Affiliation:
University of South Carolina, Department of Electrical Engineering, Columbia, SC 29208, U.S.A.
S. I. Soloviev
Affiliation:
University of South Carolina, Department of Electrical Engineering, Columbia, SC 29208, U.S.A.
T. S. Sudarshan
Affiliation:
University of South Carolina, Department of Electrical Engineering, Columbia, SC 29208, U.S.A.
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Abstract

Doping by diffusion of aluminum into 6H-SiC has been carried out in the temperature range of 1800-2100°C. Aluminum carbide (Al4C3) is thought to be one of the best candidates for a p-type diffusion source material. A thin layer graphite mask was developed to protect the wafer surface from deteriorating by sublimation/epigrowth during high temperature diffusion. High-resolution optical microscope (HROM) and atomic force microscopy (AFM) were employed to evaluate the surface morphology of the diffused samples. The protective mask significantly decreased the surface roughness. In addition, secondary ion mass spectroscopy (SIMS) was used to identify the influence of the thin graphite mask on the diffusion properties in SiC. There were no significant differences in doping profiles in the samples with and without the graphite mask.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 680: Symposium E – Wide Bandgap Electronics , 2001 , E5.10
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Imai, S., Kobayashi, S., Shinohe, T.et al. “Hot-implanted of phosphorus ions into 4H-SiC”, Materials science forum, vols. 338–342(2000), pp.861–864.Google Scholar
2. Jones, K. A., Shah, P. B., Kirchner, K. W.et al. “Annealing ion implanted SiC with an AlN cap”, Materials science and engineering B61–62 (1999), pp 281–286.Google Scholar
3. Lazar, M., Ottaviani, L., Locatelli, M. L.et al. “High electrical activation of aluminum and nitrogen implanted in 6H-SiC at room temperature, by RF annealing”, Materials Science Forum, vol. 353–356 (2001), pp. 571–574.Google Scholar
4. Soloviev, S., Gao, Y., and Sudarshan, T. S., “Doping of 6H-SiC by selective diffusion of boron”, APL, Vol. 77, No. 24, pp. 4004–4006, Dec. 2000.Google Scholar
5. Soloviev, S., Gao, Y., Sudarshan, T. S., “Boron diffusion into 6H-SiC through graphite mask”, JEM, Vol. 30, No. 8, pp. 224–227, Mar. 2001.Google Scholar
6. Gao, Y., Soloviev, S., and Sudarshan, T. S., “Selective Doping of 4H-SiC by Aluminum/Boron Co-diffusion”, Mat. Res. Soc. Symp. Vol. 640, 2001.Google Scholar