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Surface Preparation of Single Crystal C(001) Substrates for Homoepitaxial Diamond Growth

Published online by Cambridge University Press:  21 February 2011

T. P. Humphreys ,
J. B. Posthill ,
D. P. Malta ,
R. E. Thomas ,
R. A. Rudder ,
G. C. Hudson  and
R. J. Markunas
T. P. Humphreys
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709–2194
J. B. Posthill
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709–2194
D. P. Malta
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709–2194
R. E. Thomas
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709–2194
R. A. Rudder
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709–2194
G. C. Hudson
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709–2194
R. J. Markunas
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709–2194
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Absract

A novel substrate preparation procedure which can be employed to remove the original surface from as-received C(001) natural diamond substrates has been developed. A description of the various substrate processing steps which includes, low-energy ion implantation of C and O, high-temperature annealing, electrochemical etching and surface plasmas treatments is presented. Also demonstrated is the growth of topographically excellent homoepitaxial films by rf-plasma-enhanced chemical vapor deposition using water/ethanol mixtures on C(001) substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 51
Copyright
Copyright © Materials Research Society 1994

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References

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