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Surface Protection during Plasma Hydrogenation for Acceptor Passivation in InP

Published online by Cambridge University Press:  25 February 2011

J. Lopata ,
W. C. Dautremont-Smith ,
S. J. Pearton ,
J. W. Lee ,
N. T. Ha  and
H. S. Luftman
J. Lopata
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
W. C. Dautremont-Smith
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. W. Lee
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
N. T. Ha
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
H. S. Luftman
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

Various dielectric and metallic films were examined as H-permeable surface protection layers on InP during H2 or D2 plasma exposure for passivation of acceptors in the InP. Plasma deposited SiNx, SiO2, and a-Si(H) films ranging in thickness from 85 to 225 Å were used to protect p-InP during D2 plasma exposure at 250°C. Optimum protective layer thicknesses were determined by a trade-off between the effectiveness of the layer to prevent P loss from the wafer surface and the ability to diffuse atomic H or D at a rate greater than or equal to that in the underlying InP. SIMS and capacitance-voltage depth profiling were used to determine the extent of D in-diffusion and acceptor passivation respectively. Sputter deposited W and e-beam evaporated Ti films ~100 Å thick were also evaluated. The W coated sample yielded similar results to those with dielectric films in that acceptors in p-InP were passivated to a similar depth for the same plasma exposure. The 100 Å Ti film, however, did not allow the D to diffuse into the InP substrate. It is surmised that the Ti film trapped the D, thus preventing diffusion into the substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 501
Copyright
Copyright © Materials Research Society 1990

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