Hostname: page-component-8448b6f56d-mp689 Total loading time: 0 Render date: 2024-04-19T12:16:34.609Z Has data issue: false hasContentIssue false
  • English
  • Français

Surface Reactions in Discharge and Cvd Deposition of Silane

Published online by Cambridge University Press:  28 February 2011

Alan Gallagher
Alan Gallagher*
Affiliation:
Joint Institute for Laboratory Astrophysics, University of Colorado and National Bureau of Standards, Boulder, Colorado 80309-0440
Get access

Abstract

Glow discharge deposition of hydrogenated amorphous silicon films involves; (A) the electron collisions which produce the reactive species, (B) the gas reactions these species undergo while diffusing or drifting to the surfaces, and (C) the surface reactions involved in film growth and gas processing. I will first describe our knowledge of the electron and gas reactions in these discharges, then of the surface reactions, and finally I will offer some conjectures regarding the influence of these different surface reactions and bombardments upon film properties.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 3
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Boeuf, J. P. and Marode, E., J. Phys. D: Appl. Phys. 15, 2169 (1982).Google Scholar
[2] Ohuchi, M. and Kubota, T., J. Phys. D: Appl. Phys. 16, 1705 (1983).Google Scholar
[3] Kushner, M. J., J. Appl. Phys. 54, 4958 (1983).CrossRefGoogle Scholar
[4] Perrin, J., Schmitt, J. P. M., DeRosny, G., Drevillon, B., Huc, J., and Lloret, A., Chem. Phys. Lett. 73, 383 (1982).Google Scholar
[5] Melton, C. E. and Rudolf, P. S., J. Chem. Phys. 47, 1771 (1967).Google Scholar
[6] Perkins, G., Austin, E., and Lampe, F., J. Am. Chem. Soc. 101, 1109 (1979); E. Kamarates and F. Lampe, J. Am. Chem. Soc. 74, 2267 (1970).CrossRefGoogle Scholar
[7] Robertson, R., Hils, D., Chatham, H., and Gallagher, A., Appl. Phys. Lett. 43, 544 (1983); R. Robertson and A. Gallagher, J. Appl. Phys., to be published.CrossRefGoogle Scholar
[8] Drevillon, B. and Vaillant, F., Thin Film Solids 124, 217 (1985); A. M. Antione, B. Drevillon, P. Roca, and I. Cabarrocas, J. Non. Cryst. Sol. 77 and 78, 769 (1985).Google Scholar
[9] Harbison, J. P., Williams, A. J., and Long, D. V., J. Appl. Phys. 55, 946 (1984).Google Scholar
[10] Ichimura, T., Ihara, T., Hama, T., Oshawa, M., Sakai, H., and Uchida, Y., J. Non. Cryst. Sol. 77 and 78, 901 (1985); A. Matsuda, K. Yagii, M. Kayama, M. Toyama, Y. Imanishi, N. Ikuchi, and K. Tanka, Appl. Phys. Lett. 47, 1061 (1985).Google Scholar
[11] Roth, R. M., Spears, K. G., and Wong, G., Appl. Phys. Lett. 45, 28 (1984).CrossRefGoogle Scholar
[12] Knights, J., in Plasma Synthesis and Etching of Electronic Materials, edited by Chang, R. P. H. and Abeles, B. (Materials Research Society, 1985), Vol.38; J. Appl. Phys. xx, xxxx (198x).Google Scholar
[13] Gallagher, A., J. Appl. Phys., to be published.Google Scholar
[14] Matsuda, A., Kaga, T., Tanaka, H., and Tanaka, K., J. Non. Cryst. Sol. 59 and 60, 687 (1983).Google Scholar
[15] Chatham, H., Hils, D., Robertson, R., and Gallagher, A., J. Chem. Phys. 81, 1770 (1934); R. Robertson and A. Gallagher, J. Chem. Phys., submitted.Google Scholar
[16] The conversion of two SiH bonds into an Si-Si bond and an H2 molecule does not occur in the gas phase, where it is equivalent to 2SiH4 + Si2H6 + H2. However, we assume it is possible on the solid surface as the two Si atoms are constrained and vibrations to the transition state occur readily.Google Scholar