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Surface Recombination Measurements in HgCdTe by Optical Modulation Frequency Response*

Published online by Cambridge University Press:  25 February 2011

J. A. Mroczkowski ,
E. Lesondak  and
D. Resler
J. A. Mroczkowski
Affiliation:
Honeywell Electro-Optics Division, Lexington, Massachusetts 02173
E. Lesondak
Affiliation:
Honeywell Electro-Optics Division, Lexington, Massachusetts 02173
D. Resler
Affiliation:
Honeywell Electro-Optics Division, Lexington, Massachusetts 02173
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Abstract

The frequency response in the modulation of the excess electron concentration, produced by a modulated photogenerating pump beam, is used to determine bulk life-time and the surface or interface recombination velocity. The depth-wise integrated excess electron concentration is contactlessly monitored by the proportional absorption/ transmission modulation of a second probe beam. Using this approach over the 20 kHz to 3 MHz frequency range recombination velocities up to 104 cm/sec have been measured in n-type epitaxial HgCdTe films.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 90: Symposium R – Materials for Infrared Detectors and Sources , 1986 , 303
Copyright
Copyright © Materials Research Society 1987

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Footnotes

*

This work was supported under NVEOC contract DAAK-83-C-0184. The funding organization was AMMRC, Watertown, Massachusetts.

References

REFERENCES

Doyle, O.L., Mroczkowski, J.A. and Shanley, J.F., “Electron Lifetime Measurements in HgCdTe”, IRIS Specialty Group Meeting, Seattle, WA, August 1984.Google Scholar
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3. Mroczkowski, J.A., “Contractless Electron Lifetime Measurements in HgCdTe Epitaxial Films”, IRIS Specialty Group Meeting on Infrared Materials, SRI International, June 10, 11 (1986).Google Scholar
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