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Surface States at LT GaAs-n+ GaAs Interfaces

  • Ashlsh K. Verma (a1), J. S. Smith (a1) and Eicke R. Weber (a2)
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GaAs grown using Molecular Beam Epitaxy at below normal substrate temperatures (∼ 220 °C) has found many potential applications in GaAs MESFET devices. These so-called Low Temperature (LT) layers were originally used between the MESFET substrate and active region to eliminate backgating effects.[1] More recently, LT layers have been incorporated into MESFET gate structures to improve gate breakdown characteristics.[2] [3] When used in this capacity, the quality of the LT GaAs - n+ GaAs interface becomes an important issue: a large number of traps at the interface will result in channel mobility degradation. Furthermore, it is desirable to develop a method by which the interface quality can be evaluated through simple electrical measurements.

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1. Smith, F. W., Calawa, A. R., Chen, C.-L., Manfra, M.J. and Mahoney, L.J., IEEE Electron Device Lett. 9, 77 (1988).
2. Yin, L.-W., Hwang, Y., Lee, J.H., Kolbas, R.M., Trew, R.J. and Mishra, U.K., IEEE Electron Device Lett. 11, 561 (1990).
3. Chen, C.-L., Smith, F.W., Clifton, B.J., Mahoney, L.J., Manfra, M.J. and Calawa, A.R., IEEE Electron Device Lett. 12, 306 (1991).
4. Nicollian, E.H. and Goetzenberger, A., Bell System Tech. J. 46, 1055 (1967).
5. Sze, S.M., Physics of Semiconductor Devices. 2nd ed. (J. Wiley, New York, 1981).
6. Manasreh, M.O., Look, D.C., Evans, K.R. and Stutz, C.E., Phys. Rev. B 41, 10272 (1990).
7. Shinoda, Y. and Kobayashi, T., J. Applied Physics 52, 6386 (1981).
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MRS Online Proceedings Library (OPL)
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  • EISSN: 1946-4274
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