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Surface Stress Tensor Mediation of the Ledge Nucleation/Growth Process with the Surface Reconstruction Process in GaAs

Published online by Cambridge University Press:  25 February 2011

D. K. Choi ,
T. Halicioglu  and
W. A. Tiller
D. K. Choi
Affiliation:
Department of Materials Science and Engineering Stanford University, Stanford CA 94305
T. Halicioglu
Affiliation:
Department of Materials Science and Engineering Stanford University, Stanford CA 94305
W. A. Tiller
Affiliation:
Department of Materials Science and Engineering Stanford University, Stanford CA 94305
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Abstract

A new GaAs semiempirical potential energy function which utilizes both two-body and three-body contributions has been used to evaluate the surface energy and surface stress tensor for the (111) and (001)(As-terminated) surfaces as well as for ledges on the (001) surface. Both surface and ledge reconstruction patterns appear to be driven by stress tensor considerations and a long range ledge-ledge interaction arises via the stress tensor. The impact of this finding on two dimensional cluster formation and nucleation at the growing surface is very substantial.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 94: Symposium D – Initial Stages of Epitaxial Growth , 1987 , 91
Copyright
Copyright © Materials Research Society 1987

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References

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