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Surface Studies of Laser Processing of W on GaAs from WF6

Published online by Cambridge University Press:  25 February 2011

M. Tabbal ,
A. Lecours ,
R. Izquierdo ,
M. Meunier  and
A. Yelon
M. Tabbal
Affiliation:
Groupe des Couches Minces and Département de Génie Physique, Ecole Polytechnique, Montréal, Canada H3C 3A7
A. Lecours
Affiliation:
Groupe des Couches Minces and Département de Génie Physique, Ecole Polytechnique, Montréal, Canada H3C 3A7
R. Izquierdo
Affiliation:
Groupe des Couches Minces and Département de Génie Physique, Ecole Polytechnique, Montréal, Canada H3C 3A7
M. Meunier
Affiliation:
Groupe des Couches Minces and Département de Génie Physique, Ecole Polytechnique, Montréal, Canada H3C 3A7
A. Yelon
Affiliation:
Groupe des Couches Minces and Département de Génie Physique, Ecole Polytechnique, Montréal, Canada H3C 3A7
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Abstract

Laser Chemical Vapor Deposition of tungsten on GaAs from WF6 using a focused cw scanning argon-ion laser beam has been investigated. Lines have been produced using different mixtures of WF6:H2 and WF6:SiH4 and in some cases, without any reducing gas. Depositions are found to occur within a narrow process window, and are difficult to reproduce. In order to understand this process, we have performed surface analysis on GaAs samples exposed to WF6. X-Ray Photoelectron Spectroscopy studies on the interaction between WF6 and GaAs in the absence of laser illumination show that fluorinated tungsten compounds are present on the GaAs surface. Furthermore, the existence of a chemical reaction leading to the formation of GaF3 at the surface and to a loss of the stoichiometry of the substrate surface is detected. Possible mechanisms, and the effects of these reactions on the deposition process are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 236: Symposium B – Photons and Low Energy Particles in Surface Processing , 1991 , 117
Copyright
Copyright © Materials Research Society 1992

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References

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