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SurfaceSIMS, Secondary Ion Mass Spectrometry Using Oxygen Flooding: A Powerful Tool for Monitoring Surface Metal Contamination on Silicon Wafers
Published online by Cambridge University Press: 15 February 2011
Abstract
Secondary ion mass spectroscopy (SIMS) coupled with oxygen flooding of the silicon surface during analysis provides an analytical technique capable of detecting ≤1010 atoms/cm2 of many surface elemental contaminants. Of particular importance to meet the future needs of the semiconductor industry is the current ability to detect Al and Fe contamination at a level of 2×109 atoms/cm2.
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- Copyright © Materials Research Society 1995
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