Hostname: page-component-8448b6f56d-sxzjt Total loading time: 0 Render date: 2024-04-23T18:27:14.792Z Has data issue: false hasContentIssue false

Surfactant Mediated Slurry Formulations for Ge CMP Applications

Published online by Cambridge University Press:  13 August 2013

G. Bahar Basim
Affiliation:
Ozyegin University, Department of Mechanical Engineering, Nisantepe Mevki, Orman Sokak, No 13, Alemdag, Cekmekoy, 34794,Istanbul, Turkey
Ayse Karagoz
Affiliation:
Ozyegin University, Department of Mechanical Engineering, Nisantepe Mevki, Orman Sokak, No 13, Alemdag, Cekmekoy, 34794,Istanbul, Turkey
Long Chen
Affiliation:
Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal, 23955, Saudi Arabia.
Ivan Vakarelski
Affiliation:
Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal, 23955, Saudi Arabia.
Get access

Abstract

In this study, slurry formulations in the presence of self-assembled surfactant structures were investigated for Ge/SiO2 CMP applications in the absence and presence of oxidizers. Both anionic (sodium dodecyl sulfate-SDS) and cationic (cetyl trimethyl ammonium bromide-C12TAB) micelles were used in the slurry formulations as a function of pH and oxidizer concentration. CMP performances of Ge and SiO2 wafers were evaluated in terms of material removal rates, selectivity and surface quality. The material removal rate responses were also assessed through AFM wear rate tests to obtain a faster response for preliminary analyses. The surfactant adsorption characteristics were studied through surface wettability responses of the Ge and SiO2 wafers through contact angle measurements. It was observed that the self-assembled surfactant structures can help obtain selectivity on the silica/germanium system at low concentrations of the oxidizer in the slurry.

Type
Articles
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Peddeti, S., Ong, P., Leunissen, L. H. A. and Babu, S. V., “Chemical Mechanical Polishing of Ge Using Colloidal Silica Particles and H2O2 ”, doi: 10.1149/1.3575166 Electrochem. Solid-State Lett., Volume 14, Issue 7, Pages H254H257, (2011).CrossRefGoogle Scholar
Hydrick, J. M., Park, J.-S, Bai, M. J., Major, C., Curtin, M., Fiorenza, J. G., Carroll, M., and Lochtefeld, A., ECS Trans., 16, 237248 (2008).CrossRefGoogle Scholar
Park, J.-S., Curtin, M., Hydrick, J. M., Bai, J., -Li, J., Cheng, Z., Carroll, M., Fiorenza, J. G., and Lochtefeld, A., Electrochem. solid-state lett., 12, H142H144 (2009).CrossRefGoogle Scholar
Basim, G.B., Engineered Particulate Systems for Chemical Mechanical Planarization, Lambert Academic Publishing, ISBN 978-3-8433-6346-4, 2011.Google Scholar
Strength, J.B., Matovu, N.K., Penta, S.P., Babu, S.V.. Journal of The Electrochemical Society, 158(11), p.61 (2007).Google Scholar
Peddeti, S., Ong, P., Leunissen, L.H.A., Babu, S.V., “Chemical mechanical planarization of germanium shallow trench isolation structures using silica-based dispersionsMicroelectronic Engineering 93, 6166 (2012).CrossRefGoogle Scholar
Peddeti, S., Ong, P., Leunissen, L.H.A., Babu, S.V.. Microelectronics Engineering, 93, p.61 (2012).CrossRefGoogle Scholar
Basim, G.B., Vakarelski, I.U., Moudgil, B.M.. Journal of Colloid and Interface Science, 263, p. 506 (2003).CrossRefGoogle Scholar
Vakarelski, I. U., Brown, S.C, Basim, G.B, Rabinovich, Y. I., and Moudgil, B.M., “Tailoring Silica Nanotribology for CMP Slurry Optimization: Ca2+ Cation Competition in C12TAB Mediated Lubrication”, ACS Applied Materials & Interfaces, Vol. 2, No 4, pp. 12281235, (2010).CrossRefGoogle Scholar