Hostname: page-component-cb9f654ff-r5d9c Total loading time: 0 Render date: 2025-08-24T16:18:39.375Z Has data issue: false hasContentIssue false
  • English
  • Français

Synthesis and Properties of GaAs Nanocrystals in Sio2 Formed by Ion Implantation

Published online by Cambridge University Press:  21 February 2011

Jane G. Zhu ,
C. W. White ,
D. J. Wallis ,
J. D. Budai  and
S. P. Withrow
Jane G. Zhu
Affiliation:
jgzhu@solid.ssd.ornl.gov
C. W. White
Affiliation:
Oak Ridge National Laboratory, Solid State Division, Oak Ridge, TN 37831-6057 D. O. HENDERSON, Fisk University, Physics Department, Nashville, TN 37208
D. J. Wallis
Affiliation:
University of Illinois at Chicago, Physics Department, Chicago, IL 60607
J. D. Budai
Affiliation:
Oak Ridge National Laboratory, Solid State Division, Oak Ridge, TN 37831-6057 D. O. HENDERSON, Fisk University, Physics Department, Nashville, TN 37208
S. P. Withrow
Affiliation:
Oak Ridge National Laboratory, Solid State Division, Oak Ridge, TN 37831-6057 D. O. HENDERSON, Fisk University, Physics Department, Nashville, TN 37208
Get access

Abstract

GaAs nanocrystals have been formed by the sequential ion implantation method. The sequence of Ga and As ion implantation (i.e., Ga + As or As + Ga) is found to affect the size distributions of GaAs nanocrystals significantly. The nanocrystal sizes are much bigger in the samples with Ga implanted first than those with As implanted first. This phenomenon is explained by the different diffusion behaviors of Ga and As species. Different precipitate regions have been observed in the samples implanted with Ga first and then As. Optical absorption measurements show that Ga particles have already formed in the as-implanted stage.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1 See for example, Mater. Res. Soc. Symp. Proc. 358, (1995).Google Scholar
2 Canham, L. T., Appi. Phys. Lett. 57, 1046 (1990).Google Scholar
3 Takagahara, T. and Takeda, K., Phys. Rev. B 46, 15578 (1992).Google Scholar
4 Brus, L., Appl. Phys. A 53, 465 (1991).Google Scholar
5 Shcheglov, K. V., Yang, C. M., Vahala, K. J., and Atwater, H. A., Appi. Phys. Lett. 66, 745 (1995).Google Scholar
6 Zhu, J. G., White, C. W., Budai, J. D., Withrow, S. P., and Chen, Y., J. Appi. Phys. 78, 4386 (1995).Google Scholar
7 White, C. W., Budai, J. D., Zhu, J. G., Withrow, S. P., Hembree, D. H., Henderson, D. O., Ueda, A., Tung, Y. S., Mu, R., and Magruder, R. H., to be published in J. Appi. Phys. (1996).Google Scholar
8 Arnold, G. W. and Borders, J. A., J. Appi. Phys. 48, 1488 (1977).Google Scholar