A combinatorial approach was employed to ion beam synthesis and optical analysis of buried II-VI compound CdSe semiconductor nanocrystals. Typically standard ion implantation setups are designed in a way to create a laterally homogenous dose distribution of the implanted ion species. In order to achieve intentional lateral variations of the implanted doses a special implanter endstation was constructed. Computer controlled apertures in front of the wafer cover up in succession parts of a 4 in. wafer, so that a lateral pattern of distinct dose combinations of the implanted elements Cd and Se was generated. The obtained materials library consists of 1:1 stoichiometric, but also off-stoichiometric dose ratios. After implantation the wafers passed through a rapid thermal heat treatment, where the implanted material forms buried semiconductor nanocrystals. Photoluminescence spectra of the elements of the materials library were screened in rapid succession in an optical cryostat into which the whole wafer was mounted and cooled down. The obtained spectra were compared and key-parameters determined which control the photoluminescence properties. In this contribution will be shown, that slight variations of the dose ratio significantly alter the optical properties and that new efficient photoluminescent materials and processing parameters can be found. In this way, also other complex interdependencies of physical and chemical parameters in the field of multiple element ion beam implantation might be efficiently investigated.