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synthesis of III-N x-V 1-x Thin Films by N Ion Implantation

Published online by Cambridge University Press:  17 March 2011

K. M. Yu ,
W. Walukiewicz ,
W. Shan ,
J. Wu ,
J. W. Beeman ,
J. W. Ager III ,
E. E. Haller  and
M.C. Ridgway
K. M. Yu
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720
W. Walukiewicz
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720
W. Shan
Affiliation:
OptiWork, Inc. Fremont, CA 94538
J. Wu
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720
J. W. Beeman
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720
J. W. Ager III
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720
E. E. Haller
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720
M.C. Ridgway
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australia
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Abstract

Dilute III-N x-V 1-x alloys were successfully synthesized by nitrogen implantation inGaAs and InP. The fundamental band gap energy for the ion beam synthesized III-N x-V 1-x alloys was found to decrease with increasing N implantation dosein a manner similar to that commonly observed in epitaxially grown GaN xAs 1-x and InN xP 1-xthin films. The fraction of N occupying anion sites ("active" N) inthe GaN xAs 1-x layers formed by N implantation was thermally unstable anddecreased with increasing annealing temperature. In contrast, thermallystable InN xP 1-x alloys with N mole fraction as high as 0.012 were synthesized by Nimplantation in InP. Moreover, the N activation efficiency in InP was atleast a factor of two higher than in GaAs under similar processingconditions. The low N activation efficiency (<20%) in GaAs can beimproved by co-implanting Ga and N in GaAs.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 647: Symposium O – Ion Beam Synthesis & Processing of Advanced Materials , 2000 , O13.3/R8.3
Copyright
Copyright © Materials Research Society 2001

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